Selective area epitaxy of ultra-high density InGaN based quantum dots

Guangyu Liu; Hongping Zhao; Jing Zhang; Joo Hyung Park; Luke J. Mawst; Nelson Tansu

doi:10.1109/PHOTWTM.2011.5730033

Selective area epitaxy of ultra-high density InGaN based quantum dots

Guangyu Liu^*, Hongping Zhao, Jing Zhang, Joo Hyung Park, Luke J. Mawst, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock copolymer nanopatterns. This approach resulted in ultra-high InGaN QD density of 8 × 10¹⁰ cm^-2.

Original language	English (US)
Title of host publication	2011 IEEE Winter Topicals, WTM 2011
Pages	35-36
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTWTM.2011.5730033
State	Published - 2011
Externally published	Yes
Event	2011 Winter Topical Meetings, WTM 2011 - Keystone, CO, United States Duration: Jan 10 2011 → Jan 12 2011

Publication series

Name	2011 IEEE Winter Topicals, WTM 2011

Other

Other	2011 Winter Topical Meetings, WTM 2011
Country/Territory	United States
City	Keystone, CO
Period	01/10/11 → 01/12/11

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1109/PHOTWTM.2011.5730033

Cite this

@inproceedings{8b07aea4d84a4065afd9f47192c3a9c1,

title = "Selective area epitaxy of ultra-high density InGaN based quantum dots",

abstract = "Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock copolymer nanopatterns. This approach resulted in ultra-high InGaN QD density of 8 × 1010 cm-2.",

author = "Guangyu Liu and Hongping Zhao and Jing Zhang and Park, {Joo Hyung} and Mawst, {Luke J.} and Nelson Tansu",

year = "2011",

doi = "10.1109/PHOTWTM.2011.5730033",

language = "English (US)",

isbn = "9781424484287",

series = "2011 IEEE Winter Topicals, WTM 2011",

pages = "35--36",

booktitle = "2011 IEEE Winter Topicals, WTM 2011",

note = "2011 Winter Topical Meetings, WTM 2011 ; Conference date: 10-01-2011 Through 12-01-2011",

}

TY - GEN

T1 - Selective area epitaxy of ultra-high density InGaN based quantum dots

AU - Liu, Guangyu

AU - Zhao, Hongping

AU - Zhang, Jing

AU - Park, Joo Hyung

AU - Mawst, Luke J.

AU - Tansu, Nelson

PY - 2011

Y1 - 2011

N2 - Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock copolymer nanopatterns. This approach resulted in ultra-high InGaN QD density of 8 × 1010 cm-2.

AB - Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock copolymer nanopatterns. This approach resulted in ultra-high InGaN QD density of 8 × 1010 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=79953692720&partnerID=8YFLogxK

U2 - 10.1109/PHOTWTM.2011.5730033

DO - 10.1109/PHOTWTM.2011.5730033

M3 - Conference contribution

AN - SCOPUS:79953692720

SN - 9781424484287

T3 - 2011 IEEE Winter Topicals, WTM 2011

SP - 35

EP - 36

BT - 2011 IEEE Winter Topicals, WTM 2011

T2 - 2011 Winter Topical Meetings, WTM 2011

Y2 - 10 January 2011 through 12 January 2011

ER -

Selective area epitaxy of ultra-high density InGaN based quantum dots

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this