Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

Z. Z. Sun; S. F. Yoon; K. C. Yew; W. K. Loke; S. Z. Wang; T. K. Ng

doi:10.1016/S0022-0248(02)01373-8

Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

Z. Z. Sun, S. F. Yoon^*, K. C. Yew, W. K. Loke, S. Z. Wang, T. K. Ng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

GaInNAs/GaAs quantum dots (QDs) were grown by solid-source molecular beam epitaxy equipped with a radio frequency nitrogen (N₂) plasma source for the first time. High-density (∼10¹⁰cm^-2) GaInNAs QDs with small sizes (∼30 nm) were achieved. Reflection high-energy electron diffraction observation revealed that the formation of GaInNAs QDs follows the Stranski-Krastanow growth mode. The evolution of GaInNAs QDs was investigated by atomic force microscopy, and the amount of GaInNAs coverage was found to have a significant effect on the dot density, average size and aspect ratio. Low temperature (5K) photoluminescence measurement on the GaInNAs QDs showed that the incorporation of N into InGaAs effectively reduced the emission energy, and there is an optimal amount of GaInNAs coverage, which will produce QDs with maximum luminescence intensity.

Original language	English (US)
Pages (from-to)	109-115
Number of pages	7
Journal	Journal of Crystal Growth
Volume	242
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(02)01373-8
State	Published - Jul 2002
Externally published	Yes

Keywords

A1. Self-assembled quantum dots
A3. Solid-source molecular beam epitaxy

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(02)01373-8

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title = "Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy",

abstract = "GaInNAs/GaAs quantum dots (QDs) were grown by solid-source molecular beam epitaxy equipped with a radio frequency nitrogen (N2) plasma source for the first time. High-density (∼1010cm-2) GaInNAs QDs with small sizes (∼30 nm) were achieved. Reflection high-energy electron diffraction observation revealed that the formation of GaInNAs QDs follows the Stranski-Krastanow growth mode. The evolution of GaInNAs QDs was investigated by atomic force microscopy, and the amount of GaInNAs coverage was found to have a significant effect on the dot density, average size and aspect ratio. Low temperature (5K) photoluminescence measurement on the GaInNAs QDs showed that the incorporation of N into InGaAs effectively reduced the emission energy, and there is an optimal amount of GaInNAs coverage, which will produce QDs with maximum luminescence intensity.",

keywords = "A1. Self-assembled quantum dots, A3. Solid-source molecular beam epitaxy",

author = "Sun, {Z. Z.} and Yoon, {S. F.} and Yew, {K. C.} and Loke, {W. K.} and Wang, {S. Z.} and Ng, {T. K.}",

year = "2002",

month = jul,

doi = "10.1016/S0022-0248(02)01373-8",

language = "English (US)",

volume = "242",

pages = "109--115",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-2",

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TY - JOUR

T1 - Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

AU - Sun, Z. Z.

AU - Yoon, S. F.

AU - Yew, K. C.

AU - Loke, W. K.

AU - Wang, S. Z.

AU - Ng, T. K.

PY - 2002/7

Y1 - 2002/7

N2 - GaInNAs/GaAs quantum dots (QDs) were grown by solid-source molecular beam epitaxy equipped with a radio frequency nitrogen (N2) plasma source for the first time. High-density (∼1010cm-2) GaInNAs QDs with small sizes (∼30 nm) were achieved. Reflection high-energy electron diffraction observation revealed that the formation of GaInNAs QDs follows the Stranski-Krastanow growth mode. The evolution of GaInNAs QDs was investigated by atomic force microscopy, and the amount of GaInNAs coverage was found to have a significant effect on the dot density, average size and aspect ratio. Low temperature (5K) photoluminescence measurement on the GaInNAs QDs showed that the incorporation of N into InGaAs effectively reduced the emission energy, and there is an optimal amount of GaInNAs coverage, which will produce QDs with maximum luminescence intensity.

AB - GaInNAs/GaAs quantum dots (QDs) were grown by solid-source molecular beam epitaxy equipped with a radio frequency nitrogen (N2) plasma source for the first time. High-density (∼1010cm-2) GaInNAs QDs with small sizes (∼30 nm) were achieved. Reflection high-energy electron diffraction observation revealed that the formation of GaInNAs QDs follows the Stranski-Krastanow growth mode. The evolution of GaInNAs QDs was investigated by atomic force microscopy, and the amount of GaInNAs coverage was found to have a significant effect on the dot density, average size and aspect ratio. Low temperature (5K) photoluminescence measurement on the GaInNAs QDs showed that the incorporation of N into InGaAs effectively reduced the emission energy, and there is an optimal amount of GaInNAs coverage, which will produce QDs with maximum luminescence intensity.

KW - A1. Self-assembled quantum dots

KW - A3. Solid-source molecular beam epitaxy

UR - http://www.scopus.com/inward/record.url?scp=0036643853&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)01373-8

DO - 10.1016/S0022-0248(02)01373-8

M3 - Article

AN - SCOPUS:0036643853

SN - 0022-0248

VL - 242

SP - 109

EP - 115

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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