Abstract
The synthesis of a new conjugated material is reported; BDHTT-BBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (-5.7 eV) and LUMO (-2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTT-BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 × 10-3 cm2 V-1 s-1, with an on/off ratio of 104-105 and a threshold voltage of -42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.
Original language | English (US) |
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Pages (from-to) | 2091-2097 |
Number of pages | 7 |
Journal | Journal of Materials Chemistry |
Volume | 21 |
Issue number | 7 |
DOIs | |
State | Published - Feb 21 2011 |
Externally published | Yes |
ASJC Scopus subject areas
- General Chemistry
- Materials Chemistry