Self-Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High-Performance Memristors

Fei Hui, Conghui Zhang, Huanhuan Yu, Tingting Han, Jonas Weber, Yaqing Shen, Yiping Xiao, Xiaohong Li, Zhijun Zhang, Peisong Liu

Research output: Contribution to journalArticlepeer-review

Abstract

Janus 2D materials have drawn substantial attention recently owing to its extraordinary interface properties and promising applications in optoelectronic devices. However, the scalable fabrication of high-quality Janus 2D materials is still one of the main obstacles to hinder its implementation in the industry. Herein, a new method (called “chemical breakdown”) is developed to obtain large-area uniform Janus graphene oxide (J-GO) films with high-quality. Moreover, the first application of J-GO in the field of memristive devices is presented for neuromorphic computing. In particular, crossbar arrays of Ag/J-GO/Au memristive devices that exhibit threshold resistive switching (RS) with enhanced performance are fabricated, e.g., low leakage current (≈10−12 A), low operation voltage (≈0.3 V), high endurance (>12,000 cycles), and electro-synaptic plasticity. This work provides a novel strategy to obtain large-area, continuous and uniform Janus 2D films, and proposes a new application for Janus 2D materials in a hot topic (i.e., neuromorphic computing) within the field of solid-state microelectronics.
Original languageEnglish (US)
JournalAdvanced Functional Materials
DOIs
StatePublished - May 21 2023

ASJC Scopus subject areas

  • Biomaterials
  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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