Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

Changmin Lee; Chao Shen; Robert M. Farrell; Shuji Nakamura; Boon S. Ooi; John E. Bowers; Steven P. DenBaars; James S. Speck; Clayton Cozzan; Ahmed Y. Alyamani

doi:10.1117/12.2315791

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

Changmin Lee, Chao Shen, Robert M. Farrell, Shuji Nakamura, Boon S. Ooi, John E. Bowers, Steven P. DenBaars, James S. Speck, Clayton Cozzan, Ahmed Y. Alyamani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10-16 cm2, which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.

Original language	English (US)
Title of host publication	Gallium Nitride Materials and Devices XIII
Publisher	SPIE-Intl Soc Optical Eng
ISBN (Print)	9781510615496
DOIs	https://doi.org/10.1117/12.2315791
State	Published - Feb 23 2018

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10.1117/12.2315791

https://repository.kaust.edu.sa/bitstream/10754/627204/1/105321N.pdf

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@inproceedings{f66ea4e0ddd9463283855f09c735f090,

title = "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems",

abstract = "We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10-16 cm2, which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.",

author = "Changmin Lee and Chao Shen and Farrell, {Robert M.} and Shuji Nakamura and Ooi, {Boon S.} and Bowers, {John E.} and DenBaars, {Steven P.} and Speck, {James S.} and Clayton Cozzan and Alyamani, {Ahmed Y.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was funded by the KACST(SB140013)-KAUST(SB140014)-UCSB Solid State Lighting Program (SSLP) and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at University of California, Santa Barbara (UCSB). A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded Nanotechnology Infrastructure Network (NNIN) (ECS- 0335765). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR 1121053).",

year = "2018",

month = feb,

day = "23",

doi = "10.1117/12.2315791",

language = "English (US)",

isbn = "9781510615496",

booktitle = "Gallium Nitride Materials and Devices XIII",

publisher = "SPIE-Intl Soc Optical Eng",

}

TY - GEN

T1 - Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

AU - Lee, Changmin

AU - Shen, Chao

AU - Farrell, Robert M.

AU - Nakamura, Shuji

AU - Ooi, Boon S.

AU - Bowers, John E.

AU - DenBaars, Steven P.

AU - Speck, James S.

AU - Cozzan, Clayton

AU - Alyamani, Ahmed Y.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was funded by the KACST(SB140013)-KAUST(SB140014)-UCSB Solid State Lighting Program (SSLP) and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at University of California, Santa Barbara (UCSB). A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded Nanotechnology Infrastructure Network (NNIN) (ECS- 0335765). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR 1121053).

PY - 2018/2/23

Y1 - 2018/2/23

N2 - We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10-16 cm2, which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.

AB - We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10-16 cm2, which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.

UR - http://hdl.handle.net/10754/627204

UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10532/2315791/Semipolar-GaN-based-laser-diodes-for-Gbit-s-white-lighting/10.1117/12.2315791.full

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U2 - 10.1117/12.2315791

DO - 10.1117/12.2315791

M3 - Conference contribution

SN - 9781510615496

BT - Gallium Nitride Materials and Devices XIII

PB - SPIE-Intl Soc Optical Eng

ER -

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

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