Semipolar III-nitride laser diodes with zinc oxide cladding

A. Myzaferi, Arthur H. Reading, Robert M. Farrell, Daniel A. Cohen, Shuji Nakamura, Steven P. DenBaars

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (2021) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm2 and a threshold voltage of 10.3 V in a semipolar (2021) III-nitride LD with ZnO top cladding.
Original languageEnglish (US)
Pages (from-to)16922-16930
Number of pages9
JournalOptics Express
Issue number15
StatePublished - Jul 10 2017
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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