@article{777c13f6cf1f4d169c8109ff8cf6d4f2,
title = "Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W",
abstract = "We demonstrate 1 mm2 blue light-emitting diodes with a negligible efficiency droop up to ∼1 W. LEDs with 12- to 14-nm-thick single quantum wells were grown by metalorganic chemical vapor deposition on a free-standing semipolar (2021) GaN substrate. Packaged devices showed an external quantum efficiency of 42.3% at 20 A/cm2 with a negligible efficiency droop up to 991 mW at 900 mA. At 900 mA, the thermal droop and hot/cold factor were 8.2% and 0.92, respectively. The adoption of a thick active region resulted in excellent optical and thermal performance characteristics that are suitable for high-power lighting applications.",
author = "Oh, {Sang Ho} and Yonkee, {Benjamin P.} and Michael Cantore and Farrell, {Robert M.} and Speck, {James S.} and Shuji Nakamura and DenBaars, {Steven P.}",
note = "KAUST Repository Item: Exported on 2022-06-08 Acknowledgements: This work was funded by the Solid State Lighting and Energy Electronics Center (SSLEEC) and KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF)-funded Nanotechnology Infrastructure Network (NNIN) (ECS-03357650). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",
year = "2016",
month = sep,
day = "7",
doi = "10.7567/APEX.9.102102",
language = "English (US)",
volume = "9",
pages = "102102",
journal = "Applied Physics Express",
issn = "1882-0786",
publisher = "Japan Society of Applied Physics",
number = "10",
}