@article{44283d9739c94f7cb1cd9eecec430fd9,
title = "Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system",
abstract = "A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.",
author = "Chao Shen and Changmin Lee and Edgars Stegenburgs and {Holguin Lerma}, {Jorge Alberto} and Ng, {Tien Khee} and Shuji Nakamura and DenBaars, {Steven P.} and Alyamani, {Ahmed Y.} and El-Desouki, {Munir M.} and Ooi, {Boon S.}",
note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: This work was supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01), King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KACST-KAUST-UCSB Solid-State Lighting Program.",
year = "2017",
month = feb,
day = "28",
doi = "10.7567/apex.10.042201",
language = "English (US)",
volume = "10",
pages = "042201",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "4",
}