TY - GEN
T1 - Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy
AU - Iida, Daisuke
AU - Kawashima, Takeshi
AU - Iwaya, Motoaki
AU - Kamiyama, Satoshi
AU - Amano, Hiroshi
AU - Akasaki, Isamu
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2008/12/1
Y1 - 2008/12/1
N2 - A major obstacle to achieving high-performance devices using nonpolar a-plane and m-plane GaN is the existence of high-density threading dislocations and stacking faults. Low-defect-density nonpolar plane GaN films were previously grown by sidewall epitaxial overgrowth using metalorganic vapor phase epitaxy [1, 2]. In this study, we control the growth-rate ratio of Ga-polar GaN to N-polar GaN by adjusting the V/III ratio. It is possible to grow GaN only from the N-face sidewall of grooves by maintaining a high V/III ratio, which reduces the number of coalescence regions on grooves and decreases the threading-dislocation density and stacking-fault density. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
AB - A major obstacle to achieving high-performance devices using nonpolar a-plane and m-plane GaN is the existence of high-density threading dislocations and stacking faults. Low-defect-density nonpolar plane GaN films were previously grown by sidewall epitaxial overgrowth using metalorganic vapor phase epitaxy [1, 2]. In this study, we control the growth-rate ratio of Ga-polar GaN to N-polar GaN by adjusting the V/III ratio. It is possible to grow GaN only from the N-face sidewall of grooves by maintaining a high V/III ratio, which reduces the number of coalescence regions on grooves and decreases the threading-dislocation density and stacking-fault density. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200778502
UR - http://www.scopus.com/inward/record.url?scp=56249096960&partnerID=8YFLogxK
U2 - 10.1002/pssc.200778502
DO - 10.1002/pssc.200778502
M3 - Conference contribution
SP - 1575
EP - 1578
BT - Physica Status Solidi (C) Current Topics in Solid State Physics
ER -