Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

John G. Labram; Yenhung Lin; Kui Zhao; Ruipeng Li; Stuart R. Thomas; James Semple; Maria Androulidaki; Lamprini Sygellou; Martyn A. McLachlan; Emmanuel Stratakis; Aram Amassian; Thomas D. Anthopoulos

doi:10.1002/adfm.201403862

Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

John G. Labram, Yenhung Lin, Kui Zhao, Ruipeng Li, Stuart R. Thomas, James Semple, Maria Androulidaki, Lamprini Sygellou, Martyn A. McLachlan, Emmanuel Stratakis, Aram Amassian, Thomas D. Anthopoulos

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37 Scopus citations

Abstract

Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (

Original language	English (US)
Pages (from-to)	1727-1736
Number of pages	10
Journal	Advanced Functional Materials
Volume	25
Issue number	11
DOIs	https://doi.org/10.1002/adfm.201403862
State	Published - Feb 13 2015

ASJC Scopus subject areas

Biomaterials
Electrochemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/adfm.201403862

https://repository.kaust.edu.sa/bitstream/10754/575642/1/Articlefile1.pdf

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Labram, J. G., Lin, Y., Zhao, K., Li, R., Thomas, S. R., Semple, J., Androulidaki, M., Sygellou, L., McLachlan, M. A., Stratakis, E., Amassian, A., & Anthopoulos, T. D. (2015). Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices. Advanced Functional Materials, 25(11), 1727-1736. https://doi.org/10.1002/adfm.201403862

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title = "Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices",

abstract = "Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (",

author = "Labram, {John G.} and Yenhung Lin and Kui Zhao and Ruipeng Li and Thomas, {Stuart R.} and James Semple and Maria Androulidaki and Lamprini Sygellou and McLachlan, {Martyn A.} and Emmanuel Stratakis and Aram Amassian and Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: J.G.L., Y.-H.L., J.S., and T.D.A. are grateful to Dutch Polymer Institute (DPI) S-PLORE Grant No. 735 and European Research Council (ERC) AMPRO Project No. 280221 for financial support. CHESS is supported by the NSF & NIH/NIGMS via NSF Award No. DMR-1332208.",

year = "2015",

month = feb,

day = "13",

doi = "10.1002/adfm.201403862",

language = "English (US)",

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Labram, JG, Lin, Y, Zhao, K, Li, R, Thomas, SR, Semple, J, Androulidaki, M, Sygellou, L, McLachlan, MA, Stratakis, E, Amassian, A & Anthopoulos, TD 2015, 'Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices', Advanced Functional Materials, vol. 25, no. 11, pp. 1727-1736. https://doi.org/10.1002/adfm.201403862

TY - JOUR

T1 - Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

AU - Labram, John G.

AU - Lin, Yenhung

AU - Zhao, Kui

AU - Li, Ruipeng

AU - Thomas, Stuart R.

AU - Semple, James

AU - Androulidaki, Maria

AU - Sygellou, Lamprini

AU - McLachlan, Martyn A.

AU - Stratakis, Emmanuel

AU - Amassian, Aram

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: J.G.L., Y.-H.L., J.S., and T.D.A. are grateful to Dutch Polymer Institute (DPI) S-PLORE Grant No. 735 and European Research Council (ERC) AMPRO Project No. 280221 for financial support. CHESS is supported by the NSF & NIH/NIGMS via NSF Award No. DMR-1332208.

PY - 2015/2/13

Y1 - 2015/2/13

N2 - Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (

AB - Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (

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UR - http://spiral.imperial.ac.uk/bitstream/10044/1/26728/2/Labram%20et%20al.pdf

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DO - 10.1002/adfm.201403862

M3 - Article

SN - 1616-301X

VL - 25

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EP - 1736

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 11

ER -

Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

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