Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

Feng Wu; Haiding Sun; Idris A. Ajia; Iman S. Roqan; Daliang Zhang; Jiangnan Dai; Changqing Chen; Zhe Chuan Feng; Xiaohang Li

doi:10.1088/1361-6463/aa70dd

Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

Feng Wu, Haiding Sun, Idris A. Ajia, Iman S. Roqan, Daliang Zhang, Jiangnan Dai, Changqing Chen, Zhe Chuan Feng, Xiaohang Li

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Abstract

Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

Original language	English (US)
Pages (from-to)	245101
Journal	Journal of Physics D: Applied Physics
Volume	50
Issue number	24
DOIs	https://doi.org/10.1088/1361-6463/aa70dd
State	Published - May 3 2017

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@article{f24c61e794da4fc2b3b28d766ca0a198,

title = "Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design",

abstract = "Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.",

author = "Feng Wu and Haiding Sun and Ajia, {Idris A.} and Roqan, {Iman S.} and Daliang Zhang and Jiangnan Dai and Changqing Chen and Feng, {Zhe Chuan} and Xiaohang Li",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664/01-01 Acknowledgements: This work was supported by KAUST Startup and Baseline Funds (Grant No. BAS/1/1664/01-01); National Key R&D Program of China (Grant No. 2016YFB0400901, 2016YFB0400804); National Basic Research Program of China (Grant No. 2012CB619302); Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-15-07); National Natural Science Foundation of China (Grant No. 61675079, 11574166, 61377034), and the Director Fund of WNLO.",

year = "2017",

month = may,

day = "3",

doi = "10.1088/1361-6463/aa70dd",

language = "English (US)",

volume = "50",

pages = "245101",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing",

number = "24",

}

TY - JOUR

T1 - Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

AU - Wu, Feng

AU - Sun, Haiding

AU - Ajia, Idris A.

AU - Roqan, Iman S.

AU - Zhang, Daliang

AU - Dai, Jiangnan

AU - Chen, Changqing

AU - Feng, Zhe Chuan

AU - Li, Xiaohang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664/01-01 Acknowledgements: This work was supported by KAUST Startup and Baseline Funds (Grant No. BAS/1/1664/01-01); National Key R&D Program of China (Grant No. 2016YFB0400901, 2016YFB0400804); National Basic Research Program of China (Grant No. 2012CB619302); Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-15-07); National Natural Science Foundation of China (Grant No. 61675079, 11574166, 61377034), and the Director Fund of WNLO.

PY - 2017/5/3

Y1 - 2017/5/3

N2 - Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

AB - Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

UR - http://hdl.handle.net/10754/625582

UR - http://iopscience.iop.org/article/10.1088/1361-6463/aa70dd/meta

UR - http://www.scopus.com/inward/record.url?scp=85020449831&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/aa70dd

DO - 10.1088/1361-6463/aa70dd

M3 - Article

SN - 0022-3727

VL - 50

SP - 245101

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 24

ER -

Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

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