TY - JOUR
T1 - Silicon germanium as a novel mask for silicon deep reactive ion etching
AU - Serry, Mohamed Y.
AU - Rubin, Andrew
AU - Ibrahem, Mohammed Aziz
AU - Sedky, Sherif M.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2013/10
Y1 - 2013/10
N2 - This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.
AB - This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.
UR - http://hdl.handle.net/10754/563023
UR - http://ieeexplore.ieee.org/document/6567944/
UR - http://www.scopus.com/inward/record.url?scp=84885130047&partnerID=8YFLogxK
U2 - 10.1109/JMEMS.2013.2269673
DO - 10.1109/JMEMS.2013.2269673
M3 - Article
SN - 1057-7157
VL - 22
SP - 1081
EP - 1088
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
IS - 5
ER -