TY - PAT
T1 - Silicon germanium mask for deep silicon etching
AU - Serry, Mohamed
AU - Rubin, Andrew
AU - Refaat, Mohamed
AU - Sedky, Sherif
AU - Abdo, Mohammad
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2014/7/29
Y1 - 2014/7/29
N2 - Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.
AB - Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.
UR - http://hdl.handle.net/10754/594727
UR - http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=8791021
UR - http://assignment.uspto.gov/#/search?adv=patNum:8791021
UR - http://www.google.com/patents/US8791021
UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=8791021B2&KC=B2&FT=D
M3 - Patent
M1 - US 8791021 B2
ER -