TY - JOUR
T1 - Silicon heterojunction solar cells
T2 - Techno-economic assessment and opportunities
AU - Razzaq, Arsalan
AU - Allen, Thomas G.
AU - Liu, Wenzhu
AU - Liu, Zhengxin
AU - De Wolf, Stefaan
N1 - Publisher Copyright:
© 2022 Elsevier Inc.
PY - 2022/3/16
Y1 - 2022/3/16
N2 - The ever-increasing electricity demand from renewables has stimulated growth in the photovoltaic (PV) industry. Yet, while grid parity has already been achieved in several countries, a continued decline in module prices coupled with further efficiency improvements at an annual growth rate of ∼0.5%abs are needed to sustain its market growth. Mainstream PV technologies are still based on crystalline silicon (c-Si) wafers with heavily doped regions and directly metallized contacts. However, these cause band-gap narrowing, Auger recombination losses, and contact recombination losses. Passivating contact (PC) technologies can overcome these limitations by decoupling surface passivation and contact formation requirements. Among PC technologies, amorphous silicon-based silicon heterojunction (SHJ) solar cells have established the world record power conversion efficiency for single-junction c-Si PV. Due to their excellent performance and simple design, they are also the preferred bottom cell technology for perovskite/silicon tandems. Nevertheless, SHJ technology accounts for only ∼2% of the current PV market share. In this review, we discuss the techno-economic challenges for large-volume SHJ manufacturing. In doing so, we highlight critical areas that need to be addressed for enabling terawatt-scale SHJ deployment.
AB - The ever-increasing electricity demand from renewables has stimulated growth in the photovoltaic (PV) industry. Yet, while grid parity has already been achieved in several countries, a continued decline in module prices coupled with further efficiency improvements at an annual growth rate of ∼0.5%abs are needed to sustain its market growth. Mainstream PV technologies are still based on crystalline silicon (c-Si) wafers with heavily doped regions and directly metallized contacts. However, these cause band-gap narrowing, Auger recombination losses, and contact recombination losses. Passivating contact (PC) technologies can overcome these limitations by decoupling surface passivation and contact formation requirements. Among PC technologies, amorphous silicon-based silicon heterojunction (SHJ) solar cells have established the world record power conversion efficiency for single-junction c-Si PV. Due to their excellent performance and simple design, they are also the preferred bottom cell technology for perovskite/silicon tandems. Nevertheless, SHJ technology accounts for only ∼2% of the current PV market share. In this review, we discuss the techno-economic challenges for large-volume SHJ manufacturing. In doing so, we highlight critical areas that need to be addressed for enabling terawatt-scale SHJ deployment.
KW - passivating contacts
KW - silicon heterojunction
KW - silicon photovoltaics
UR - http://www.scopus.com/inward/record.url?scp=85126112577&partnerID=8YFLogxK
U2 - 10.1016/j.joule.2022.02.009
DO - 10.1016/j.joule.2022.02.009
M3 - Review article
AN - SCOPUS:85126112577
SN - 2542-4351
VL - 6
SP - 514
EP - 542
JO - Joule
JF - Joule
IS - 3
ER -