Abstract
Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.
Original language | English (US) |
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Title of host publication | 2010 35th IEEE Photovoltaic Specialists Conference |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 934-938 |
Number of pages | 5 |
ISBN (Print) | 9781424458905 |
DOIs | |
State | Published - Jun 2010 |
Externally published | Yes |