Silicon plasmonic integrated interferometer sensor for lab on chip applications

Ahmad B. Ayoub; Dengxin Ji; Qiaoqiang Gan; Mohamed A. Swillam

doi:10.1016/j.optcom.2018.02.053

Silicon plasmonic integrated interferometer sensor for lab on chip applications

Ahmad B. Ayoub, Dengxin Ji, Qiaoqiang Gan, Mohamed A. Swillam

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A sensing structure on a silicon platform is proposed with access silicon waveguide ports. The sensing mechanism is mainly based the interference effect between the SPP wave on both interferences. The sensing platform contains a metal channel deposited on silicon nitride base. The top and the bottom metal surfaces carry 2 decoupled SPP modes. The dimensions are optimized to maximize the coupling from the input silicon waveguide to the SPP wave at the top and bottom metal interfaces. High sensitivity and small foot print is achieved using this integrated simple plasmonic design. Full wave analysis is performed to examine the performance and optimize the dimensions and material. The optimized design and optimal material yield enhanced sensitivities of 19400 nm/RIU.

Original language	English (US)
Pages (from-to)	319-325
Number of pages	7
Journal	Optics Communications
Volume	427
DOIs	https://doi.org/10.1016/j.optcom.2018.02.053
State	Published - Nov 15 2018
Externally published	Yes

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.optcom.2018.02.053

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title = "Silicon plasmonic integrated interferometer sensor for lab on chip applications",

abstract = "A sensing structure on a silicon platform is proposed with access silicon waveguide ports. The sensing mechanism is mainly based the interference effect between the SPP wave on both interferences. The sensing platform contains a metal channel deposited on silicon nitride base. The top and the bottom metal surfaces carry 2 decoupled SPP modes. The dimensions are optimized to maximize the coupling from the input silicon waveguide to the SPP wave at the top and bottom metal interfaces. High sensitivity and small foot print is achieved using this integrated simple plasmonic design. Full wave analysis is performed to examine the performance and optimize the dimensions and material. The optimized design and optimal material yield enhanced sensitivities of 19400 nm/RIU.",

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T1 - Silicon plasmonic integrated interferometer sensor for lab on chip applications

AU - Ayoub, Ahmad B.

AU - Ji, Dengxin

AU - Gan, Qiaoqiang

AU - Swillam, Mohamed A.

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2018/11/15

Y1 - 2018/11/15

N2 - A sensing structure on a silicon platform is proposed with access silicon waveguide ports. The sensing mechanism is mainly based the interference effect between the SPP wave on both interferences. The sensing platform contains a metal channel deposited on silicon nitride base. The top and the bottom metal surfaces carry 2 decoupled SPP modes. The dimensions are optimized to maximize the coupling from the input silicon waveguide to the SPP wave at the top and bottom metal interfaces. High sensitivity and small foot print is achieved using this integrated simple plasmonic design. Full wave analysis is performed to examine the performance and optimize the dimensions and material. The optimized design and optimal material yield enhanced sensitivities of 19400 nm/RIU.

AB - A sensing structure on a silicon platform is proposed with access silicon waveguide ports. The sensing mechanism is mainly based the interference effect between the SPP wave on both interferences. The sensing platform contains a metal channel deposited on silicon nitride base. The top and the bottom metal surfaces carry 2 decoupled SPP modes. The dimensions are optimized to maximize the coupling from the input silicon waveguide to the SPP wave at the top and bottom metal interfaces. High sensitivity and small foot print is achieved using this integrated simple plasmonic design. Full wave analysis is performed to examine the performance and optimize the dimensions and material. The optimized design and optimal material yield enhanced sensitivities of 19400 nm/RIU.

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DO - 10.1016/j.optcom.2018.02.053

M3 - Article

SN - 0030-4018

VL - 427

SP - 319

EP - 325

JO - Optics Communications

JF - Optics Communications

ER -

Silicon plasmonic integrated interferometer sensor for lab on chip applications

Abstract

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