Simple MOS transistor-based realization of fractional-order capacitors

Mohammed E. Fouda; A. AboBakr; A. S. Elwakil; A. G. Radwan; A. M. Eltawil

doi:10.1109/ISCAS.2019.8702341

Simple MOS transistor-based realization of fractional-order capacitors

Mohammed E. Fouda, A. AboBakr, A. S. Elwakil, A. G. Radwan, A. M. Eltawil

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

A new second-order MOS transistor based circuit block approximating the behavior of a fractional-order capacitor is proposed. The circuit is modular and therefore the order of the approximation can be increased by more stages of the same circuit in cascade or in parallel. Simulation results using a TSMC 65nm CMOS technology are provided and show less than 2o of phase error in two decades around the center frequency of the approximation. Experimental results of realized fractional-order capacitors and of a fractional-order relaxation oscillator are also shown.

Original language	English (US)
Title of host publication	Proceedings - IEEE International Symposium on Circuits and Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781728103976
DOIs	https://doi.org/10.1109/ISCAS.2019.8702341
State	Published - Jan 1 2019
Externally published	Yes

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10.1109/ISCAS.2019.8702341

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title = "Simple MOS transistor-based realization of fractional-order capacitors",

abstract = "A new second-order MOS transistor based circuit block approximating the behavior of a fractional-order capacitor is proposed. The circuit is modular and therefore the order of the approximation can be increased by more stages of the same circuit in cascade or in parallel. Simulation results using a TSMC 65nm CMOS technology are provided and show less than 2o of phase error in two decades around the center frequency of the approximation. Experimental results of realized fractional-order capacitors and of a fractional-order relaxation oscillator are also shown.",

author = "Fouda, {Mohammed E.} and A. AboBakr and Elwakil, {A. S.} and Radwan, {A. G.} and Eltawil, {A. M.}",

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T1 - Simple MOS transistor-based realization of fractional-order capacitors

AU - Fouda, Mohammed E.

AU - AboBakr, A.

AU - Elwakil, A. S.

AU - Radwan, A. G.

AU - Eltawil, A. M.

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-20

PY - 2019/1/1

Y1 - 2019/1/1

N2 - A new second-order MOS transistor based circuit block approximating the behavior of a fractional-order capacitor is proposed. The circuit is modular and therefore the order of the approximation can be increased by more stages of the same circuit in cascade or in parallel. Simulation results using a TSMC 65nm CMOS technology are provided and show less than 2o of phase error in two decades around the center frequency of the approximation. Experimental results of realized fractional-order capacitors and of a fractional-order relaxation oscillator are also shown.

AB - A new second-order MOS transistor based circuit block approximating the behavior of a fractional-order capacitor is proposed. The circuit is modular and therefore the order of the approximation can be increased by more stages of the same circuit in cascade or in parallel. Simulation results using a TSMC 65nm CMOS technology are provided and show less than 2o of phase error in two decades around the center frequency of the approximation. Experimental results of realized fractional-order capacitors and of a fractional-order relaxation oscillator are also shown.

UR - https://ieeexplore.ieee.org/document/8702341/

UR - http://www.scopus.com/inward/record.url?scp=85066809241&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2019.8702341

DO - 10.1109/ISCAS.2019.8702341

M3 - Conference contribution

SN - 9781728103976

BT - Proceedings - IEEE International Symposium on Circuits and Systems

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Simple MOS transistor-based realization of fractional-order capacitors

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