Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell

Peiting Zheng, Fiacre E. Rougieux, Chris Samundsett, Xinbo Yang, Yimao Wan, Julien Degoulange, Roland Einhaus, Pascal Rivat, Daniel MacDonald

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


In this paper, we present the 3D simulation of>20% efficiency solar cells using n-type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosphorus gettering. Simulation ofthe power losses of both devices are analysed as a function of measured material and cell parameters, including minority carrier lifetime, reflectance, contact resistivity and recombination parameters of the diffused and non-diffused surfaces.

Original languageEnglish (US)
Pages (from-to)434-442
Number of pages9
JournalEnergy Procedia
StatePublished - Aug 1 2016
Externally publishedYes
Event6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 - Chambery, France
Duration: Mar 7 2016Mar 9 2016


  • compensation
  • modelling and simulation
  • silicon
  • solar cell
  • upgraded metallurgical grade

ASJC Scopus subject areas

  • General Energy


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