Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts

Engineering

• Field-Effect Transistor 100%
• Carbon Nanotubes 100%
• Energy Gap 60%
• Experimental Observation 40%
• Dielectrics 40%
• Rectification 40%
• Dielectric Layer 20%
• Single-Walled Carbon Nanotube 20%
• Gate Voltage 20%
• Schottky Barrier 20%

Material Science

• Field Effect Transistors 100%
• Carbon Nanotubes 100%
• Dielectric Material 50%
• Schottky Barrier 16%
• Transistor 16%

Keyphrases

• Diode Characteristic 100%
• Reverse Current 50%
• Dielectric Thickness 50%
• Forward Current 50%
• High Work Function 25%