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Simulation of leakage current in Si/Ge/Si quantum dot floating gate MOSFET using high-K material as tunnel oxide
Adha Sukma Aji*, Mohamad Insan Nugraha, Yudhistira, Fitria Rahayu, Yudi Darma
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
5
Scopus
citations