Single-ZnO-nanowire memory

Yen De Chiang*, Wen Yuan Chang, Ching Yuan Ho, Cheng Ying Chen, Chih Hsiang Ho, Su Jien Lin, Tai Bor Wu, Jr-Hau He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

77 Scopus citations


Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

Original languageEnglish (US)
Article number5741715
Pages (from-to)1735-1740
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - Jun 1 2011


  • Nanowire (NW)
  • ZnO
  • resistance random access memory (ReRAM)
  • resistive switching
  • space-charge-limited (SCL) conduction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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