Single-ZnO-nanowire memory

Yen De Chiang; Wen Yuan Chang; Ching Yuan Ho; Cheng Ying Chen; Chih Hsiang Ho; Su Jien Lin; Tai Bor Wu; Jr Hau He

doi:10.1109/TED.2011.2121914

Single-ZnO-nanowire memory

Yen De Chiang^*, Wen Yuan Chang, Ching Yuan Ho, Cheng Ying Chen, Chih Hsiang Ho, Su Jien Lin, Tai Bor Wu, Jr Hau He

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 10⁵. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

Original language	English (US)
Article number	5741715
Pages (from-to)	1735-1740
Number of pages	6
Journal	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume	58
Issue number	6
DOIs	https://doi.org/10.1109/TED.2011.2121914
State	Published - Jun 2011
Externally published	Yes

Keywords

Nanowire (NW)
ZnO
resistance random access memory (ReRAM)
resistive switching
space-charge-limited (SCL) conduction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2011.2121914

Cite this

@article{0d9b93ff985d477dbf0cb59237a31730,

title = "Single-ZnO-nanowire memory",

abstract = "Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.",

keywords = "Nanowire (NW), ZnO, resistance random access memory (ReRAM), resistive switching, space-charge-limited (SCL) conduction",

author = "Chiang, {Yen De} and Chang, {Wen Yuan} and Ho, {Ching Yuan} and Chen, {Cheng Ying} and Ho, {Chih Hsiang} and Lin, {Su Jien} and Wu, {Tai Bor} and He, {Jr Hau}",

year = "2011",

month = jun,

doi = "10.1109/TED.2011.2121914",

language = "English (US)",

volume = "58",

pages = "1735--1740",

journal = "IEEE TRANSACTIONS ON ELECTRON DEVICES",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

number = "6",

}

TY - JOUR

T1 - Single-ZnO-nanowire memory

AU - Chiang, Yen De

AU - Chang, Wen Yuan

AU - Ho, Ching Yuan

AU - Chen, Cheng Ying

AU - Ho, Chih Hsiang

AU - Lin, Su Jien

AU - Wu, Tai Bor

AU - He, Jr Hau

PY - 2011/6

Y1 - 2011/6

N2 - Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

AB - Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

KW - Nanowire (NW)

KW - ZnO

KW - resistance random access memory (ReRAM)

KW - resistive switching

KW - space-charge-limited (SCL) conduction

UR - http://www.scopus.com/inward/record.url?scp=79957663921&partnerID=8YFLogxK

U2 - 10.1109/TED.2011.2121914

DO - 10.1109/TED.2011.2121914

M3 - Article

AN - SCOPUS:79957663921

SN - 0018-9383

VL - 58

SP - 1735

EP - 1740

JO - IEEE TRANSACTIONS ON ELECTRON DEVICES

JF - IEEE TRANSACTIONS ON ELECTRON DEVICES

IS - 6

M1 - 5741715

ER -

Single-ZnO-nanowire memory

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this