The author presents a singular perturbation analysis of the fundamental semiconductor device equations, which form a system of three second order elliptic differential equations subject to mixed Neumann-Dirichlet boundary conditions. The system consists of Poisson's equation and the continuity equations and describes potential and carrier distributions in an arbitrary semiconductor device. Using matched asymptotic expansions, the author demonstrates the occurrence of internal layers at surfaces across which the impurity distribution has a jump discontinuity and the occurrence of boundary layers at semiconductor-oxide interfaces. He derives the layer-equations and the reduced problem (charge-neutral-approximation) and give existence proofs for these problems. The layer solutions which characterize the solutions of the singularly perturbed problem close to junctions and interfaces respectively are shown to decay exponentially away from the junctions and interfaces respectively. It is shown that if the device is in thermal equilibrium, then the solution of the semiconductor problem is close to the sum of the reduced solution and the layer solution assuming that the singular perturbation parameter is small. Numerical results for a two-dimensional diode are presented.
|Original language||English (US)|
|Number of pages||33|
|Journal||SIAM Journal on Applied Mathematics|
|State||Published - Oct 1984|
ASJC Scopus subject areas
- Applied Mathematics