Skyrmion-Magnetic Tunnel Junction Synapse With Long-Term and Short-Term Plasticity for Neuromorphic Computing

Aijaz H. Lone*, H. Fariborzi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Magnetic skyrmion-based data storage and unconventional computing devices have gained increasing attention due to their topological protection, small size, and low driving current. However, skyrmion creation, deletion, and motion are still being studied. In this study, we propose a skyrmion-based neuromorphic magnetic tunnel junction (MTJ) device with both long- and short-term plasticity (LTP and STP) (mixed synaptic plasticity). We showed that plasticity could be controlled by the magnetic field, spin-orbit torque (SOT), and the voltage-controlled magnetic anisotropy (VCMA) switching mechanism. LTP depends on the skyrmion density and is manipulated by the SOT and magnetic field while STP is controlled by the VCMA. The LTP property of the device was utilized for static image recognition. By incorporating the STP feature, the device gained additional temporal filtering ability and could adapt to a dynamic environment. The skyrmions were conserved and confined to a nano track to minimize the skyrmion nucleation energy. The synapse device was trained and tested for emulating a deep neural network. We observed that when the skyrmion density was increased, the inference accuracy improved: 90% accuracy was achieved by the system at the highest density. We further demonstrated the dynamic environment learning and inference capabilities of the proposed device.

Original languageEnglish (US)
Pages (from-to)371-378
Number of pages8
JournalIEEE TRANSACTIONS ON ELECTRON DEVICES
Volume70
Issue number1
DOIs
StatePublished - Jan 1 2023

Keywords

  • Dynamic environment learning
  • long-term plasticity (LTP)
  • magnetic tunnel junction (MTJ)
  • neuromorphic computing
  • short-term plasticity (STP)
  • skyrmions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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