Solution-processable carbon nanotubes for semiconducting thin-film transistor devices

Chun Wei Lee; Xuanding Han; Fuming Chen; Jun Wei; Yuan Chen; Mary B. Chan-Park; Lain Jong Li

doi:10.1002/adma.200902461

Solution-processable carbon nanotubes for semiconducting thin-film transistor devices

Chun Wei Lee, Xuanding Han, Fuming Chen, Jun Wei, Yuan Chen, Mary B. Chan-Park, Lain Jong Li

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

(Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm² V^-1s^-1 while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics.

Original language	English (US)
Pages (from-to)	1278-1282
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	11
DOIs	https://doi.org/10.1002/adma.200902461
State	Published - Mar 19 2010
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Solution-processable carbon nanotubes for semiconducting thin-film transistor devices",

abstract = "(Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm2 V-1s-1 while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics.",

author = "Lee, {Chun Wei} and Xuanding Han and Fuming Chen and Jun Wei and Yuan Chen and Chan-Park, {Mary B.} and Li, {Lain Jong}",

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AU - Lee, Chun Wei

AU - Han, Xuanding

AU - Chen, Fuming

AU - Wei, Jun

AU - Chen, Yuan

AU - Chan-Park, Mary B.

AU - Li, Lain Jong

PY - 2010/3/19

Y1 - 2010/3/19

N2 - (Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm2 V-1s-1 while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics.

AB - (Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm2 V-1s-1 while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics.

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JO - Advanced Materials

JF - Advanced Materials

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ER -

Solution-processable carbon nanotubes for semiconducting thin-film transistor devices

Abstract

ASJC Scopus subject areas

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