Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity

Pichaya Pattanasattayavong*, Stephan Rossbauer, Stuart Thomas, John G. Labram, Henry J. Snaith, Thomas D. Anthopoulos

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


We report the fabrication of light-sensing thin-film transistors based on solution processed films of ZnO, as the channel material, functionalized with an organic dye as the light sensitizer. Due to the presence of the dye, the hybrid devices show exceptionally high photosensitivity to green light of 10 6 and a maximum photoresponsivity on the order of 10 4 A/W. The high performance is argued to be the result of the grain barrier limited nature of electron transport across the polycrystalline ZnO film and its dependence on charge carrier density upon illumination with green light. In addition to the excellent photoresponsivity and signal gain, the hybrid ZnO-dye photoactive layer exhibits high optical transparency. The unique combination of simple device fabrication and distinctive physical characteristics, such as optical transparency, renders the technology attractive for application in large-area transparent photodetectors.

Original languageEnglish (US)
Article number074507
JournalJournal of Applied Physics
Issue number7
StatePublished - Oct 1 2012
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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