Solution-Processed HfO2/Y2O3 Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation

Physics

• Permittivity 66%
• Temperature 66%
• Fabrication 66%
• Silicon 33%
• Thin Films 33%
• Capacitance 33%
• Optical Properties 33%
• Annealing 33%
• Dielectrics 33%
• Flexible Electronics 33%
• Printed Electronics 33%
• Electrical Properties 33%
• Sol-Gel 33%
• Ultraviolet Radiation 33%
• Substrates 33%
• High Temperature 33%
• Quality 33%

Material Science

• Multilayers 100%
• Solution 66%
• Thin Films 33%
• Dielectric Material 33%
• Dielectric Films 33%
• Amorphous Material 33%