Solution processed low-voltage organic transistors and complementary inverters

James M. Ball; Paul H. Wöbkenberg; Florian Colĺaux; Martin Heeney; John E. Anthony; Iain McCulloch; Donal D.C. Bradley; Thomas D. Anthopoulos

doi:10.1063/1.3212736

Solution processed low-voltage organic transistors and complementary inverters

James M. Ball, Paul H. Wöbkenberg, Florian Colĺaux, Martin Heeney, John E. Anthony, Iain McCulloch, Donal D.C. Bradley, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We demonstrate electron and hole-transporting low-voltage transistors based on self-assembling monolayer (SAM) gate dielectrics and solution processed organic small-molecule semiconductors. The studied SAMs include methyl and carboxylic acid terminated molecules. Compared to methyl terminated alkylphosphonic acids, carboxylic acid terminated SAMs are found to exhibit increased surface energy. This enables solution processing of a wide range of small molecules onto the dielectric for the fabrication of low-voltage transistors. Using these transistors we demonstrate complementary inverters operating at voltages

Original language	English (US)
Journal	Applied Physics Letters
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.3212736
State	Published - Sep 18 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3212736

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title = "Solution processed low-voltage organic transistors and complementary inverters",

abstract = "We demonstrate electron and hole-transporting low-voltage transistors based on self-assembling monolayer (SAM) gate dielectrics and solution processed organic small-molecule semiconductors. The studied SAMs include methyl and carboxylic acid terminated molecules. Compared to methyl terminated alkylphosphonic acids, carboxylic acid terminated SAMs are found to exhibit increased surface energy. This enables solution processing of a wide range of small molecules onto the dielectric for the fabrication of low-voltage transistors. Using these transistors we demonstrate complementary inverters operating at voltages",

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AU - Ball, James M.

AU - Wöbkenberg, Paul H.

AU - Colĺaux, Florian

AU - Heeney, Martin

AU - Anthony, John E.

AU - McCulloch, Iain

AU - Bradley, Donal D.C.

AU - Anthopoulos, Thomas D.

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PY - 2009/9/18

Y1 - 2009/9/18

N2 - We demonstrate electron and hole-transporting low-voltage transistors based on self-assembling monolayer (SAM) gate dielectrics and solution processed organic small-molecule semiconductors. The studied SAMs include methyl and carboxylic acid terminated molecules. Compared to methyl terminated alkylphosphonic acids, carboxylic acid terminated SAMs are found to exhibit increased surface energy. This enables solution processing of a wide range of small molecules onto the dielectric for the fabrication of low-voltage transistors. Using these transistors we demonstrate complementary inverters operating at voltages

AB - We demonstrate electron and hole-transporting low-voltage transistors based on self-assembling monolayer (SAM) gate dielectrics and solution processed organic small-molecule semiconductors. The studied SAMs include methyl and carboxylic acid terminated molecules. Compared to methyl terminated alkylphosphonic acids, carboxylic acid terminated SAMs are found to exhibit increased surface energy. This enables solution processing of a wide range of small molecules onto the dielectric for the fabrication of low-voltage transistors. Using these transistors we demonstrate complementary inverters operating at voltages

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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Solution processed low-voltage organic transistors and complementary inverters

Abstract

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