Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

Liyang Yu; Xiaoran Li; Jeremy Smith; Steven Tierney; Richard Sweeney; B. K.Charlotte Kjellander; Gerwin H. Gelinck; Thomas D. Anthopoulos; Natalie Stingelin

doi:10.1039/c2jm30893b

Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

Liyang Yu^*, Xiaoran Li, Jeremy Smith, Steven Tierney, Richard Sweeney, B. K.Charlotte Kjellander, Gerwin H. Gelinck, Thomas D. Anthopoulos, Natalie Stingelin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm ² V ^-1 s ^-1 depending on crystal orientation by careful selection of casting conditions.

Original language	English (US)
Pages (from-to)	9458-9461
Number of pages	4
Journal	Journal of Materials Chemistry
Volume	22
Issue number	19
DOIs	https://doi.org/10.1039/c2jm30893b
State	Published - May 21 2012
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

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@article{594a6005a8a04902bf7febbdea058bb1,

title = "Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy",

abstract = "We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm 2 V -1 s -1 depending on crystal orientation by careful selection of casting conditions.",

author = "Liyang Yu and Xiaoran Li and Jeremy Smith and Steven Tierney and Richard Sweeney and Kjellander, {B. K.Charlotte} and Gelinck, {Gerwin H.} and Anthopoulos, {Thomas D.} and Natalie Stingelin",

year = "2012",

month = may,

day = "21",

doi = "10.1039/c2jm30893b",

language = "English (US)",

volume = "22",

pages = "9458--9461",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "19",

}

TY - JOUR

T1 - Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

AU - Yu, Liyang

AU - Li, Xiaoran

AU - Smith, Jeremy

AU - Tierney, Steven

AU - Sweeney, Richard

AU - Kjellander, B. K.Charlotte

AU - Gelinck, Gerwin H.

AU - Anthopoulos, Thomas D.

AU - Stingelin, Natalie

PY - 2012/5/21

Y1 - 2012/5/21

N2 - We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm 2 V -1 s -1 depending on crystal orientation by careful selection of casting conditions.

AB - We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm 2 V -1 s -1 depending on crystal orientation by careful selection of casting conditions.

UR - http://www.scopus.com/inward/record.url?scp=84860369140&partnerID=8YFLogxK

U2 - 10.1039/c2jm30893b

DO - 10.1039/c2jm30893b

M3 - Article

AN - SCOPUS:84860369140

SN - 0959-9428

VL - 22

SP - 9458

EP - 9461

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 19

ER -

Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

Abstract

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