Spin diffusion in bulk GaN measured with MnAs spin injector

Shafat Jahangir, Fatih Dogan, Hyun Kum, Aurelien Manchon, Pallab Bhattacharya

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Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.
Original languageEnglish (US)
JournalPhysical Review B
Issue number3
StatePublished - Jul 16 2012


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