Spin-flip Raman scattering from shallow and deep donor centers in nitrogen-doped p-type zinc selenide

P. J. Boyce; J. J. Davies; D. Wolverson; K. Ohkawa; T. Mitsuyu

doi:10.1063/1.112965

Spin-flip Raman scattering from shallow and deep donor centers in nitrogen-doped p-type zinc selenide

P. J. Boyce^*, J. J. Davies, D. Wolverson, K. Ohkawa, T. Mitsuyu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The net acceptor concentration in p-type ZnSe doped with increasing amounts of nitrogen is believed to be limited by the formation of a compensating donor species at a depth of about 45-55 meV beneath the conduction band. We report spin-flip Raman scattering from these and other donor-like centers in specimens produced by nitrogen radical doping during molecular beam epitaxial growth. The experiments show that the main compensating donor center introduced by nitrogen doping has a g value of 1.36±0.07, in agreement with the interpretation of previous optically detected magnetic resonance spectra from nitrogen-doped layers.

Original language	English (US)
Pages (from-to)	2063-2065
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	16
DOIs	https://doi.org/10.1063/1.112965
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{a3d223ba588c40e4b12a7c784b79f8b2,

title = "Spin-flip Raman scattering from shallow and deep donor centers in nitrogen-doped p-type zinc selenide",

abstract = "The net acceptor concentration in p-type ZnSe doped with increasing amounts of nitrogen is believed to be limited by the formation of a compensating donor species at a depth of about 45-55 meV beneath the conduction band. We report spin-flip Raman scattering from these and other donor-like centers in specimens produced by nitrogen radical doping during molecular beam epitaxial growth. The experiments show that the main compensating donor center introduced by nitrogen doping has a g value of 1.36±0.07, in agreement with the interpretation of previous optically detected magnetic resonance spectra from nitrogen-doped layers.",

author = "Boyce, {P. J.} and Davies, {J. J.} and D. Wolverson and K. Ohkawa and T. Mitsuyu",

year = "1994",

doi = "10.1063/1.112965",

language = "English (US)",

volume = "65",

pages = "2063--2065",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "16",

}

TY - JOUR

T1 - Spin-flip Raman scattering from shallow and deep donor centers in nitrogen-doped p-type zinc selenide

AU - Boyce, P. J.

AU - Davies, J. J.

AU - Wolverson, D.

AU - Ohkawa, K.

AU - Mitsuyu, T.

PY - 1994

Y1 - 1994

N2 - The net acceptor concentration in p-type ZnSe doped with increasing amounts of nitrogen is believed to be limited by the formation of a compensating donor species at a depth of about 45-55 meV beneath the conduction band. We report spin-flip Raman scattering from these and other donor-like centers in specimens produced by nitrogen radical doping during molecular beam epitaxial growth. The experiments show that the main compensating donor center introduced by nitrogen doping has a g value of 1.36±0.07, in agreement with the interpretation of previous optically detected magnetic resonance spectra from nitrogen-doped layers.

AB - The net acceptor concentration in p-type ZnSe doped with increasing amounts of nitrogen is believed to be limited by the formation of a compensating donor species at a depth of about 45-55 meV beneath the conduction band. We report spin-flip Raman scattering from these and other donor-like centers in specimens produced by nitrogen radical doping during molecular beam epitaxial growth. The experiments show that the main compensating donor center introduced by nitrogen doping has a g value of 1.36±0.07, in agreement with the interpretation of previous optically detected magnetic resonance spectra from nitrogen-doped layers.

UR - http://www.scopus.com/inward/record.url?scp=0028523974&partnerID=8YFLogxK

U2 - 10.1063/1.112965

DO - 10.1063/1.112965

M3 - Article

AN - SCOPUS:0028523974

SN - 0003-6951

VL - 65

SP - 2063

EP - 2065

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Spin-flip Raman scattering from shallow and deep donor centers in nitrogen-doped p-type zinc selenide

Abstract

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