INIS
detection
100%
doped materials
100%
injection
100%
spin
100%
niobium
100%
lanthanum
100%
lifetime
66%
strontium titanates
66%
carriers
50%
spin orientation
33%
magnesium oxides
33%
devices
16%
mobility
16%
barriers
16%
semiconductor materials
16%
interfaces
16%
single crystals
16%
thin films
16%
epitaxy
16%
temperature range 0273-0400 k
16%
scattering
16%
temperature dependence
16%
Chemistry
Niobium
100%
Lanthanum
100%
Strontium
100%
Procedure
100%
Reaction Temperature
75%
Doping
50%
Magnesium Oxide
50%
Semiconductor
25%
Single Crystalline Solid
25%
Spintronics
25%
Liquid Film
25%
Scattering
25%
Ambient Reaction Temperature
25%
Compound Mobility
25%
Material Science
Titanate
100%
Temperature
100%
Semiconductor Material
25%
Single Crystal
25%
Thin Films
25%
Material
25%
Devices
25%