Spin relaxation in InGaN quantum disks in GaN nanowires

Animesh Banerjee; Dog; Junseok Heo; Aurelien Manchon; Wei Guo; Pallab K. Bhattacharya

doi:10.1021/nl203091f

Spin relaxation in InGaN quantum disks in GaN nanowires

Animesh Banerjee, Dog, Junseok Heo, Aurelien Manchon, Wei Guo, Pallab K. Bhattacharya

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Abstract

The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. © 2011 American Chemical Society.

Original language	English (US)
Pages (from-to)	5396-5400
Number of pages	5
Journal	Nano Letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1021/nl203091f
State	Published - Dec 14 2011

ASJC Scopus subject areas

Bioengineering
General Materials Science
General Chemistry
Mechanical Engineering
Condensed Matter Physics

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@article{4c73800081c746519b774bb6d349e5f7,

title = "Spin relaxation in InGaN quantum disks in GaN nanowires",

abstract = "The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. {\textcopyright} 2011 American Chemical Society.",

author = "Animesh Banerjee and Dog and Junseok Heo and Aurelien Manchon and Wei Guo and Bhattacharya, {Pallab K.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): N012509-00 Acknowledgements: The work is supported by KAUST under Grant N012509-00.",

year = "2011",

month = dec,

day = "14",

doi = "10.1021/nl203091f",

language = "English (US)",

volume = "11",

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journal = "Nano Letters",

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TY - JOUR

T1 - Spin relaxation in InGaN quantum disks in GaN nanowires

AU - Banerjee, Animesh

AU - Dog,

AU - Heo, Junseok

AU - Manchon, Aurelien

AU - Guo, Wei

AU - Bhattacharya, Pallab K.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): N012509-00 Acknowledgements: The work is supported by KAUST under Grant N012509-00.

PY - 2011/12/14

Y1 - 2011/12/14

N2 - The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. © 2011 American Chemical Society.

AB - The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. © 2011 American Chemical Society.

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UR - https://pubs.acs.org/doi/10.1021/nl203091f

UR - http://www.scopus.com/inward/record.url?scp=83655190540&partnerID=8YFLogxK

U2 - 10.1021/nl203091f

DO - 10.1021/nl203091f

M3 - Article

SN - 1530-6984

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SP - 5396

EP - 5400

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Spin relaxation in InGaN quantum disks in GaN nanowires

Abstract

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