Spontaneous and stimulated emission of ZnO/Zn0.85Mg 0.15O asymmetric double quantum wells

S. C. Su; Y. M. Lu; G. Z. Xing; T. Wu

doi:10.1016/j.spmi.2010.08.010

Spontaneous and stimulated emission of ZnO/Zn_0.85Mg _0.15O asymmetric double quantum wells

S. C. Su, Y. M. Lu, G. Z. Xing, T. Wu

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

ZnOZn_0.85Mg_0.15O asymmetric double quantum wells (ADQWs) were fabricated on an m-plane Al₂O₃ substrate by plasma-assisted molecular beam epitaxy (P-MBE). The ADQW structures were confirmed by comparing the photoluminescence (PL) spectra of the ZnOZn _0.85Mg_0.15O MQWs and ZnOZn_0.85Mg _0.15O ADQWs. The exciton tunnelling properties of the ADQWs were studied by means of temperature-dependent PL spectra. The carrier tunneling through the thin barrier is conducive to stimulated emission in the wide wells (WWs) of the ADQWs. The origin of the stimulated emission is excitonexciton scattering in the WWs of ADQWs.

Original language	English (US)
Pages (from-to)	485-490
Number of pages	6
Journal	Superlattices and Microstructures
Volume	48
Issue number	5
DOIs	https://doi.org/10.1016/j.spmi.2010.08.010
State	Published - Nov 2010
Externally published	Yes

Keywords

ADQWs
Stimulation emission
ZnMgO

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.spmi.2010.08.010

Cite this

@article{c5d69848063d49229dae862da9843823,

title = "Spontaneous and stimulated emission of ZnO/Zn0.85Mg 0.15O asymmetric double quantum wells",

abstract = "ZnOZn0.85Mg0.15O asymmetric double quantum wells (ADQWs) were fabricated on an m-plane Al2O3 substrate by plasma-assisted molecular beam epitaxy (P-MBE). The ADQW structures were confirmed by comparing the photoluminescence (PL) spectra of the ZnOZn 0.85Mg0.15O MQWs and ZnOZn0.85Mg 0.15O ADQWs. The exciton tunnelling properties of the ADQWs were studied by means of temperature-dependent PL spectra. The carrier tunneling through the thin barrier is conducive to stimulated emission in the wide wells (WWs) of the ADQWs. The origin of the stimulated emission is excitonexciton scattering in the WWs of ADQWs.",

keywords = "ADQWs, Stimulation emission, ZnMgO",

author = "Su, {S. C.} and Lu, {Y. M.} and Xing, {G. Z.} and T. Wu",

note = "Funding Information: This work was supported by the Key Project of the National Natural Science Foundation of China under Grants No. 60336020 , No. 50532050 , the Natural Science Foundation of China under Grant No. 60976036 , the Natural Science Foundation of Guangdong province under Grant 8151806001000009 . ",

year = "2010",

month = nov,

doi = "10.1016/j.spmi.2010.08.010",

language = "English (US)",

volume = "48",

pages = "485--490",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "5",

}

TY - JOUR

T1 - Spontaneous and stimulated emission of ZnO/Zn0.85Mg 0.15O asymmetric double quantum wells

AU - Su, S. C.

AU - Lu, Y. M.

AU - Xing, G. Z.

AU - Wu, T.

N1 - Funding Information: This work was supported by the Key Project of the National Natural Science Foundation of China under Grants No. 60336020 , No. 50532050 , the Natural Science Foundation of China under Grant No. 60976036 , the Natural Science Foundation of Guangdong province under Grant 8151806001000009 .

PY - 2010/11

Y1 - 2010/11

N2 - ZnOZn0.85Mg0.15O asymmetric double quantum wells (ADQWs) were fabricated on an m-plane Al2O3 substrate by plasma-assisted molecular beam epitaxy (P-MBE). The ADQW structures were confirmed by comparing the photoluminescence (PL) spectra of the ZnOZn 0.85Mg0.15O MQWs and ZnOZn0.85Mg 0.15O ADQWs. The exciton tunnelling properties of the ADQWs were studied by means of temperature-dependent PL spectra. The carrier tunneling through the thin barrier is conducive to stimulated emission in the wide wells (WWs) of the ADQWs. The origin of the stimulated emission is excitonexciton scattering in the WWs of ADQWs.

AB - ZnOZn0.85Mg0.15O asymmetric double quantum wells (ADQWs) were fabricated on an m-plane Al2O3 substrate by plasma-assisted molecular beam epitaxy (P-MBE). The ADQW structures were confirmed by comparing the photoluminescence (PL) spectra of the ZnOZn 0.85Mg0.15O MQWs and ZnOZn0.85Mg 0.15O ADQWs. The exciton tunnelling properties of the ADQWs were studied by means of temperature-dependent PL spectra. The carrier tunneling through the thin barrier is conducive to stimulated emission in the wide wells (WWs) of the ADQWs. The origin of the stimulated emission is excitonexciton scattering in the WWs of ADQWs.

KW - ADQWs

KW - Stimulation emission

KW - ZnMgO

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U2 - 10.1016/j.spmi.2010.08.010

DO - 10.1016/j.spmi.2010.08.010

M3 - Article

AN - SCOPUS:77957946219

SN - 0749-6036

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SP - 485

EP - 490

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

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