ZnOZn0.85Mg0.15O asymmetric double quantum wells (ADQWs) were fabricated on an m-plane Al2O3 substrate by plasma-assisted molecular beam epitaxy (P-MBE). The ADQW structures were confirmed by comparing the photoluminescence (PL) spectra of the ZnOZn 0.85Mg0.15O MQWs and ZnOZn0.85Mg 0.15O ADQWs. The exciton tunnelling properties of the ADQWs were studied by means of temperature-dependent PL spectra. The carrier tunneling through the thin barrier is conducive to stimulated emission in the wide wells (WWs) of the ADQWs. The origin of the stimulated emission is excitonexciton scattering in the WWs of ADQWs.
- Stimulation emission
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering