Stability scheme of ZnO-thin film resistive switching memory: Influence of defects by controllable oxygen pressure ratio

Hsin Wei Huang, Chen Fang Kang, Fang I. Lai, Hau He, Su Jien Lin, Yu Lun Chueh*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

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