Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

Woojin Park; Jung Wook Min; Sohail Faizan Shaikh; Muhammad Mustafa Hussain

doi:10.1002/pssa.201700534

Stable MoS₂ Field-Effect Transistors Using TiO₂ Interfacial Layer at Metal/MoS₂ Contact

Woojin Park, Jung Wook Min, Sohail Faizan Shaikh, Muhammad Mustafa Hussain^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Molybdenum disulphide (MoS₂) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO₂) interfacial layer between contact metal and MoS₂ channel is suggested to achieve more stable performances. The reduced threshold voltage (V_TH) shift and reduced series resistance (R_SD) were simultaneously achieved.

Original language	English (US)
Article number	1700534
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	214
Issue number	12
DOIs	https://doi.org/10.1002/pssa.201700534
State	Published - Dec 2017

Keywords

MoS
TiO
contacts
field-effect transistors
interfaces
thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

Access to Document

10.1002/pssa.201700534

Cite this

@article{568a43016dbb43309a9798a4b419dd64,

title = "Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact",

abstract = "Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.",

keywords = "MoS, TiO, contacts, field-effect transistors, interfaces, thin films",

author = "Woojin Park and Min, {Jung Wook} and Shaikh, {Sohail Faizan} and Hussain, {Muhammad Mustafa}",

note = "Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2017",

month = dec,

doi = "10.1002/pssa.201700534",

language = "English (US)",

volume = "214",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley",

number = "12",

}

TY - JOUR

T1 - Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

AU - Park, Woojin

AU - Min, Jung Wook

AU - Shaikh, Sohail Faizan

AU - Hussain, Muhammad Mustafa

PY - 2017/12

Y1 - 2017/12

N2 - Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.

AB - Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.

KW - MoS

KW - TiO

KW - contacts

KW - field-effect transistors

KW - interfaces

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85028915561&partnerID=8YFLogxK

U2 - 10.1002/pssa.201700534

DO - 10.1002/pssa.201700534

M3 - Article

AN - SCOPUS:85028915561

SN - 1862-6300

VL - 214

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 12

M1 - 1700534

ER -