TY - JOUR
T1 - Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact
AU - Park, Woojin
AU - Min, Jung-Wook
AU - Shaikh, Sohail F.
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-Sensors-2707.
PY - 2017/9/7
Y1 - 2017/9/7
N2 - Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.
AB - Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.
UR - http://hdl.handle.net/10754/625760
UR - http://onlinelibrary.wiley.com/doi/10.1002/pssa.201700534/full
UR - http://www.scopus.com/inward/record.url?scp=85028915561&partnerID=8YFLogxK
U2 - 10.1002/pssa.201700534
DO - 10.1002/pssa.201700534
M3 - Article
AN - SCOPUS:85028915561
SN - 1862-6300
VL - 214
SP - 1700534
JO - physica status solidi (a)
JF - physica status solidi (a)
IS - 12
ER -