Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film

Rajib Sahu, Hari Bhau Gholap, Gandi Mounika, Krishnan Dileep, Badri Vishal, Somnath Ghara, Ranjan Datta*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (∼10-1Torr) shows p-type conductivity with a carrier concentration of ∼3×1016cm-3. This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (VO) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (∼10-5Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice.

Original languageEnglish (US)
Pages (from-to)504-508
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Issue number3
StatePublished - Mar 1 2016


  • Density functional theory
  • Doping
  • P-type conductivity
  • Pulsed laser deposition
  • Thins films
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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