Standards for the Characterization of Endurance in Resistive Switching Devices

Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Suñe, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia B. Gonzalez, Fernando Aguirre, Felix PalumboKaichen Zhu, Juan Bautista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Dueñas, Tao Wang, Qiangfei Xia, Sebastian Pazos

Research output: Contribution to journalArticlepeer-review

62 Scopus citations


Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even
Original languageEnglish (US)
JournalACS Nano
StatePublished - Nov 3 2021

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)
  • Engineering(all)


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