Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner; Xiao Hang Li; Tsung Ting Kao; Md Mahbub Satter; Hee Jin Kim; Shyh Chiang Shen; P. Douglas Yoder; Jae Hyun Ryou; Russell D. Dupuis; Kewei Sun; Yong Wei; Ti Li; Alec Fischer; Fernando A. Ponce

doi:10.1002/pssa.201329013

Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner, Xiao Hang Li, Tsung Ting Kao, Md Mahbub Satter, Hee Jin Kim, Shyh Chiang Shen, P. Douglas Yoder, Jae Hyun Ryou, Russell D. Dupuis^*, Kewei Sun, Yong Wei, Ti Li, Alec Fischer, Fernando A. Ponce

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of Al_xGa _1-xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm^-2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.

Original language	English (US)
Pages (from-to)	1768-1770
Number of pages	3
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	210
Issue number	9
DOIs	https://doi.org/10.1002/pssa.201329013
State	Published - Sep 2013
Externally published	Yes

Keywords

AlGaInN
III-V semiconductors
MOCVD
lasers
metalorganic chemical vapor deposition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.201329013

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Lochner, Z., Li, X. H., Kao, T. T., Satter, M. M., Kim, H. J., Shen, S. C., Yoder, P. D., Ryou, J. H., Dupuis, R. D., Sun, K., Wei, Y., Li, T., Fischer, A., & Ponce, F. A. (2013). Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate. Physica Status Solidi (A) Applications and Materials Science, 210(9), 1768-1770. https://doi.org/10.1002/pssa.201329013

@article{4c38d50c4d484bdcb0bb469f281cbadd,

title = "Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate",

abstract = "Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa 1-xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm-2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.",

keywords = "AlGaInN, III-V semiconductors, MOCVD, lasers, metalorganic chemical vapor deposition",

author = "Zachary Lochner and Li, {Xiao Hang} and Kao, {Tsung Ting} and Satter, {Md Mahbub} and Kim, {Hee Jin} and Shen, {Shyh Chiang} and Yoder, {P. Douglas} and Ryou, {Jae Hyun} and Dupuis, {Russell D.} and Kewei Sun and Yong Wei and Ti Li and Alec Fischer and Ponce, {Fernando A.}",

year = "2013",

month = sep,

doi = "10.1002/pssa.201329013",

language = "English (US)",

volume = "210",

pages = "1768--1770",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley",

number = "9",

}

Lochner, Z, Li, XH, Kao, TT, Satter, MM, Kim, HJ, Shen, SC, Yoder, PD, Ryou, JH, Dupuis, RD, Sun, K, Wei, Y, Li, T, Fischer, A & Ponce, FA 2013, 'Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate', Physica Status Solidi (A) Applications and Materials Science, vol. 210, no. 9, pp. 1768-1770. https://doi.org/10.1002/pssa.201329013

TY - JOUR

T1 - Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

AU - Lochner, Zachary

AU - Li, Xiao Hang

AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Kim, Hee Jin

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Ryou, Jae Hyun

AU - Dupuis, Russell D.

AU - Sun, Kewei

AU - Wei, Yong

AU - Li, Ti

AU - Fischer, Alec

AU - Ponce, Fernando A.

PY - 2013/9

Y1 - 2013/9

N2 - Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa 1-xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm-2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.

AB - Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa 1-xN/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo-pumped lasers. The threshold power density was 1.88 MW cm-2. The layers below the active region were Si-doped and had bottom waveguide and cladding layer n-type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.

KW - AlGaInN

KW - III-V semiconductors

KW - MOCVD

KW - lasers

KW - metalorganic chemical vapor deposition

UR - http://www.scopus.com/inward/record.url?scp=84884978449&partnerID=8YFLogxK

U2 - 10.1002/pssa.201329013

DO - 10.1002/pssa.201329013

M3 - Article

AN - SCOPUS:84884978449

SN - 1862-6300

VL - 210

SP - 1768

EP - 1770

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 9

ER -

Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

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