Stochasticity Modeling in Memristors

Rawan Naous, Maruan Al-Shedivat, Khaled N. Salama

Research output: Contribution to journalArticlepeer-review

84 Scopus citations


Diverse models have been proposed over the past years to explain the exhibiting behavior of memristors, the fourth fundamental circuit element. The models varied in complexity ranging from a description of physical mechanisms to a more generalized mathematical modeling. Nonetheless, stochasticity, a widespread observed phenomenon, has been immensely overlooked from the modeling perspective. This inherent variability within the operation of the memristor is a vital feature for the integration of this nonlinear device into the stochastic electronics realm of study. In this paper, experimentally observed innate stochasticity is modeled in a circuit compatible format. The model proposed is generic and could be incorporated into variants of threshold-based memristor models in which apparent variations in the output hysteresis convey the switching threshold shift. Further application as a noise injection alternative paves the way for novel approaches in the fields of neuromorphic engineering circuits design. On the other hand, extra caution needs to be paid to variability intolerant digital designs based on non-deterministic memristor logic.
Original languageEnglish (US)
Pages (from-to)15-28
Number of pages14
JournalIEEE Transactions on Nanotechnology
Issue number1
StatePublished - Oct 26 2015


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