TY - JOUR
T1 - Strain-Induced Sulfur Vacancies in Monolayer MoS2
AU - Albaridy, Rehab
AU - Periyanagounder, Dharmaraj
AU - Naphade, Dipti
AU - Lee, Chien Ju
AU - Hedhili, Mohamed
AU - Wan, Yi
AU - Chang, Wen Hao
AU - Anthopoulos, Thomas D.
AU - Tung, Vincent
AU - Aljarb, Areej
AU - Schwingenschlögl, Udo
N1 - Funding Information:
We thank Dr. Paresh Rout for fruitful discussions and acknowledge financial support of King Abdullah University of Science and Technology (KAUST).
Publisher Copyright:
© 2023 American Chemical Society
PY - 2023
Y1 - 2023
N2 - The tuning of two-dimensional (2D) materials offers significant potential to overcome nanoelectronic limitations. As strain engineering is a nondestructive approach, we examine in this study the influence of biaxial strain on the chalcogen vacancy formation energy in transition metal dichalcogenides, employing a combination of calculations and experiments, specifically density functional theory, spherical-corrected scanning transmission electron microscopy, X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopy, Kelvin probe force microscopy, and I-V characterization. We demonstrate that compressive/tensile biaxial strain decreases/increases the chalcogen vacancy formation energy, increasing/decreasing the probability of creating chalcogen vacancies during the growth. Thus, differently strained areas within a sample can have different chalcogen vacancy densities, opening up a way to customize the work function and a route for defect engineering.
AB - The tuning of two-dimensional (2D) materials offers significant potential to overcome nanoelectronic limitations. As strain engineering is a nondestructive approach, we examine in this study the influence of biaxial strain on the chalcogen vacancy formation energy in transition metal dichalcogenides, employing a combination of calculations and experiments, specifically density functional theory, spherical-corrected scanning transmission electron microscopy, X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopy, Kelvin probe force microscopy, and I-V characterization. We demonstrate that compressive/tensile biaxial strain decreases/increases the chalcogen vacancy formation energy, increasing/decreasing the probability of creating chalcogen vacancies during the growth. Thus, differently strained areas within a sample can have different chalcogen vacancy densities, opening up a way to customize the work function and a route for defect engineering.
UR - http://www.scopus.com/inward/record.url?scp=85170433630&partnerID=8YFLogxK
U2 - 10.1021/acsmaterialslett.3c00507
DO - 10.1021/acsmaterialslett.3c00507
M3 - Article
AN - SCOPUS:85170433630
SN - 2639-4979
VL - 5
SP - 2584
EP - 2593
JO - ACS Materials Letters
JF - ACS Materials Letters
IS - 9
ER -