Strikingly different behaviors of photoluminescence and terahertz generation in InGaN/GaN quantum wells

Guan Sun; Ruolin Chen; Yujie J. Ding; Hongping Zhao; Guangyu Liu; Jing Zhang; Nelson Tansu

doi:10.1109/JSTQE.2012.2218093

Strikingly different behaviors of photoluminescence and terahertz generation in InGaN/GaN quantum wells

Guan Sun^*, Ruolin Chen, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have investigated photoluminescence (PL) and terahertz (THz) generation simultaneously from multiple InGaN/GaN quantum wells (QWs) with different well periods. The PL intensity fully saturates when the period of QWs is increased up to 4. However, THz output power continuously scales up even if the period of QWs is increased up to 16. Such a behavior indicates that high-power THz wave can be generated without efficient recombination of the photogenerated carriers, since THz is only generated during the absorption process. Following the measurements of intensity and peak energy of PL together with output power and spectra of THz, we have concluded that the screening effect induced by photo-generated carriers can be neglected when the pump fluence is as low as 85 μJ/cm ².

Original language	English (US)
Article number	6340305
Pages (from-to)	6-11
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	19
Issue number	1
DOIs	https://doi.org/10.1109/JSTQE.2012.2218093
State	Published - 2013
Externally published	Yes

Keywords

Broadband terahertz (THz) wave
InGaN/GaN quantum wells (QWs)
built-in field
dipole radiation
photoluminescence (PL)

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Strikingly different behaviors of photoluminescence and terahertz generation in InGaN/GaN quantum wells",

abstract = "We have investigated photoluminescence (PL) and terahertz (THz) generation simultaneously from multiple InGaN/GaN quantum wells (QWs) with different well periods. The PL intensity fully saturates when the period of QWs is increased up to 4. However, THz output power continuously scales up even if the period of QWs is increased up to 16. Such a behavior indicates that high-power THz wave can be generated without efficient recombination of the photogenerated carriers, since THz is only generated during the absorption process. Following the measurements of intensity and peak energy of PL together with output power and spectra of THz, we have concluded that the screening effect induced by photo-generated carriers can be neglected when the pump fluence is as low as 85 μJ/cm 2.",

keywords = "Broadband terahertz (THz) wave, InGaN/GaN quantum wells (QWs), built-in field, dipole radiation, photoluminescence (PL)",

author = "Guan Sun and Ruolin Chen and Ding, {Yujie J.} and Hongping Zhao and Guangyu Liu and Jing Zhang and Nelson Tansu",

year = "2013",

doi = "10.1109/JSTQE.2012.2218093",

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pages = "6--11",

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T1 - Strikingly different behaviors of photoluminescence and terahertz generation in InGaN/GaN quantum wells

AU - Sun, Guan

AU - Chen, Ruolin

AU - Ding, Yujie J.

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Zhang, Jing

AU - Tansu, Nelson

PY - 2013

Y1 - 2013

N2 - We have investigated photoluminescence (PL) and terahertz (THz) generation simultaneously from multiple InGaN/GaN quantum wells (QWs) with different well periods. The PL intensity fully saturates when the period of QWs is increased up to 4. However, THz output power continuously scales up even if the period of QWs is increased up to 16. Such a behavior indicates that high-power THz wave can be generated without efficient recombination of the photogenerated carriers, since THz is only generated during the absorption process. Following the measurements of intensity and peak energy of PL together with output power and spectra of THz, we have concluded that the screening effect induced by photo-generated carriers can be neglected when the pump fluence is as low as 85 μJ/cm 2.

AB - We have investigated photoluminescence (PL) and terahertz (THz) generation simultaneously from multiple InGaN/GaN quantum wells (QWs) with different well periods. The PL intensity fully saturates when the period of QWs is increased up to 4. However, THz output power continuously scales up even if the period of QWs is increased up to 16. Such a behavior indicates that high-power THz wave can be generated without efficient recombination of the photogenerated carriers, since THz is only generated during the absorption process. Following the measurements of intensity and peak energy of PL together with output power and spectra of THz, we have concluded that the screening effect induced by photo-generated carriers can be neglected when the pump fluence is as low as 85 μJ/cm 2.

KW - Broadband terahertz (THz) wave

KW - InGaN/GaN quantum wells (QWs)

KW - built-in field

KW - dipole radiation

KW - photoluminescence (PL)

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ER -

Strikingly different behaviors of photoluminescence and terahertz generation in InGaN/GaN quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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