Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells

Guan Sun; Ruolin Chen; Yujie J. Ding; Hongping Zhao; Guangyu Liu; Jing Zhang; Nelson Tansu

Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells

Guan Sun^*, Ruolin Chen, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.

Original language	English (US)
Title of host publication	2012 Conference on Lasers and Electro-Optics, CLEO 2012
State	Published - 2012
Externally published	Yes
Event	2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States Duration: May 6 2012 → May 11 2012

Other

Other	2012 Conference on Lasers and Electro-Optics, CLEO 2012
Country/Territory	United States
City	San Jose, CA
Period	05/6/12 → 05/11/12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{41a974fba6a44a6e9ebc85f7839f5b49,

title = "Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells",

abstract = "We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.",

author = "Guan Sun and Ruolin Chen and Ding, {Yujie J.} and Hongping Zhao and Guangyu Liu and Jing Zhang and Nelson Tansu",

year = "2012",

language = "English (US)",

isbn = "9781467318396",

booktitle = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",

note = "2012 Conference on Lasers and Electro-Optics, CLEO 2012 ; Conference date: 06-05-2012 Through 11-05-2012",

}

TY - GEN

T1 - Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells

AU - Sun, Guan

AU - Chen, Ruolin

AU - Ding, Yujie J.

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Zhang, Jing

AU - Tansu, Nelson

PY - 2012

Y1 - 2012

N2 - We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.

AB - We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.

UR - http://www.scopus.com/inward/record.url?scp=84870363098&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870363098

SN - 9781467318396

BT - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

T2 - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

Y2 - 6 May 2012 through 11 May 2012

ER -

Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells

Abstract

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ASJC Scopus subject areas

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