Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells

Guan Sun; Ruolin Chen; Yujie J. Ding; Hongping Zhao; Guangyu Liu; Jing Zhang; Nelson Tansu

doi:10.1364/cleo_si.2012.ctu2j.3

Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells

Guan Sun^*, Ruolin Chen, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.

Original language	English (US)
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2012
Publisher	Optical Society of America (OSA)
Pages	CTu2J.3
ISBN (Print)	9781557529435
DOIs	https://doi.org/10.1364/cleo_si.2012.ctu2j.3
State	Published - 2012
Externally published	Yes
Event	CLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States Duration: May 6 2012 → May 11 2012

Publication series

Name	CLEO: Science and Innovations, CLEO_SI 2012

Other

Other	CLEO: Science and Innovations, CLEO_SI 2012
Country/Territory	United States
City	San Jose, CA
Period	05/6/12 → 05/11/12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1364/cleo_si.2012.ctu2j.3

Cite this

Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2012). Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells. In CLEO: Science and Innovations, CLEO_SI 2012 (pp. CTu2J.3). (CLEO: Science and Innovations, CLEO_SI 2012). Optical Society of America (OSA). https://doi.org/10.1364/cleo_si.2012.ctu2j.3

@inproceedings{0eeddbfb660942e19a787223c401f7b5,

title = "Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells",

abstract = "We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.",

author = "Guan Sun and Ruolin Chen and Ding, {Yujie J.} and Hongping Zhao and Guangyu Liu and Jing Zhang and Nelson Tansu",

year = "2012",

doi = "10.1364/cleo_si.2012.ctu2j.3",

language = "English (US)",

isbn = "9781557529435",

series = "CLEO: Science and Innovations, CLEO_SI 2012",

publisher = "Optical Society of America (OSA)",

pages = "CTu2J.3",

booktitle = "CLEO",

note = "CLEO: Science and Innovations, CLEO_SI 2012 ; Conference date: 06-05-2012 Through 11-05-2012",

}

Sun, G, Chen, R, Ding, YJ, Zhao, H, Liu, G, Zhang, J & Tansu, N 2012, Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells. in CLEO: Science and Innovations, CLEO_SI 2012. CLEO: Science and Innovations, CLEO_SI 2012, Optical Society of America (OSA), pp. CTu2J.3, CLEO: Science and Innovations, CLEO_SI 2012, San Jose, CA, United States, 05/6/12. https://doi.org/10.1364/cleo_si.2012.ctu2j.3

Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells. / Sun, Guan; Chen, Ruolin; Ding, Yujie J. et al.
CLEO: Science and Innovations, CLEO_SI 2012. Optical Society of America (OSA), 2012. p. CTu2J.3 (CLEO: Science and Innovations, CLEO_SI 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells

AU - Sun, Guan

AU - Chen, Ruolin

AU - Ding, Yujie J.

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Zhang, Jing

AU - Tansu, Nelson

PY - 2012

Y1 - 2012

N2 - We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.

AB - We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.

UR - http://www.scopus.com/inward/record.url?scp=84890708363&partnerID=8YFLogxK

U2 - 10.1364/cleo_si.2012.ctu2j.3

DO - 10.1364/cleo_si.2012.ctu2j.3

M3 - Conference contribution

AN - SCOPUS:84890708363

SN - 9781557529435

T3 - CLEO: Science and Innovations, CLEO_SI 2012

SP - CTu2J.3

BT - CLEO

PB - Optical Society of America (OSA)

T2 - CLEO: Science and Innovations, CLEO_SI 2012

Y2 - 6 May 2012 through 11 May 2012

ER -

Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

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