Strong influence of SiO2 thin film on properties of GaN epilayers

X. C. Wang; S. J. Xu; S. J. Chua; K. Li; X. H. Zhang; Z. H. Zhang; K. B. Chong; X. Zhang

doi:10.1063/1.123378

Strong influence of SiO₂ thin film on properties of GaN epilayers

X. C. Wang^*, S. J. Xu, S. J. Chua, K. Li, X. H. Zhang, Z. H. Zhang, K. B. Chong, X. Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this letter, we report strong degradation of photoluminescence (PL) performance of GaN epilayers due to SiO₂ layers that were deposited on GaN surfaces by electron-beam evaporation. Secondary ion mass spectrometry measurements show that the oxygen concentration of GaN with SiO₂ layers is one order of magnitude more than that of as-grown GaN. This fact indicates that oxygen can very easily replace nitrogen in GaN. It was also found that rapid thermal processing can recover and improve the optical quality of GaN with SiO₂ layer. As a reference, Si_xN_y was found to have little effect on PL performance of GaN.

Original language	English (US)
Pages (from-to)	818-820
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	6
DOIs	https://doi.org/10.1063/1.123378
State	Published - Feb 8 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Strong influence of SiO2 thin film on properties of GaN epilayers",

abstract = "In this letter, we report strong degradation of photoluminescence (PL) performance of GaN epilayers due to SiO2 layers that were deposited on GaN surfaces by electron-beam evaporation. Secondary ion mass spectrometry measurements show that the oxygen concentration of GaN with SiO2 layers is one order of magnitude more than that of as-grown GaN. This fact indicates that oxygen can very easily replace nitrogen in GaN. It was also found that rapid thermal processing can recover and improve the optical quality of GaN with SiO2 layer. As a reference, SixNy was found to have little effect on PL performance of GaN.",

author = "Wang, {X. C.} and Xu, {S. J.} and Chua, {S. J.} and K. Li and Zhang, {X. H.} and Zhang, {Z. H.} and Chong, {K. B.} and X. Zhang",

year = "1999",

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T1 - Strong influence of SiO2 thin film on properties of GaN epilayers

AU - Wang, X. C.

AU - Xu, S. J.

AU - Chua, S. J.

AU - Li, K.

AU - Zhang, X. H.

AU - Zhang, Z. H.

AU - Chong, K. B.

AU - Zhang, X.

PY - 1999/2/8

Y1 - 1999/2/8

N2 - In this letter, we report strong degradation of photoluminescence (PL) performance of GaN epilayers due to SiO2 layers that were deposited on GaN surfaces by electron-beam evaporation. Secondary ion mass spectrometry measurements show that the oxygen concentration of GaN with SiO2 layers is one order of magnitude more than that of as-grown GaN. This fact indicates that oxygen can very easily replace nitrogen in GaN. It was also found that rapid thermal processing can recover and improve the optical quality of GaN with SiO2 layer. As a reference, SixNy was found to have little effect on PL performance of GaN.

AB - In this letter, we report strong degradation of photoluminescence (PL) performance of GaN epilayers due to SiO2 layers that were deposited on GaN surfaces by electron-beam evaporation. Secondary ion mass spectrometry measurements show that the oxygen concentration of GaN with SiO2 layers is one order of magnitude more than that of as-grown GaN. This fact indicates that oxygen can very easily replace nitrogen in GaN. It was also found that rapid thermal processing can recover and improve the optical quality of GaN with SiO2 layer. As a reference, SixNy was found to have little effect on PL performance of GaN.

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VL - 74

SP - 818

EP - 820

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Strong influence of SiO₂ thin film on properties of GaN epilayers

Abstract

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