Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

Jian Sun; Samadhan B. Patil; Yeongah Soh; Jürgen Kose

doi:10.1143/APEX.5.033002

Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

Jian Sun, Samadhan B. Patil, Yeongah Soh, Jürgen Kose

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.

Original language	English (US)
Pages (from-to)	033002
Journal	Applied Physics Express
Volume	5
Issue number	3
DOIs	https://doi.org/10.1143/APEX.5.033002
State	Published - Feb 21 2012

ASJC Scopus subject areas

General Physics and Astronomy
General Engineering

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title = "Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device",

abstract = "A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. {\textcopyright} 2012 The Japan Society of Applied Physics.",

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T1 - Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

AU - Sun, Jian

AU - Patil, Samadhan B.

AU - Soh, Yeongah

AU - Kose, Jürgen

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2012/2/21

Y1 - 2012/2/21

N2 - A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.

AB - A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.

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UR - https://iopscience.iop.org/article/10.1143/APEX.5.033002

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M3 - Article

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SP - 033002

JO - Applied Physics Express

JF - Applied Physics Express

IS - 3

ER -

Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

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