Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

Jhonathan Prieto Rojas; Muhammad Mustafa Hussain; Galo T. Sevilla

doi:10.1063/1.4791693

Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

Jhonathan Prieto Rojas, Muhammad Mustafa Hussain, Galo T. Sevilla

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

Original language	English (US)
Pages (from-to)	064102
Journal	Applied Physics Letters
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.4791693
State	Published - Feb 12 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4791693

https://repository.kaust.edu.sa/bitstream/10754/293685/1/Structural%20and%20electrical%20characteristics%20of%20high-k%20metal%20gate%20metal%20oxide%20Feb%202013.pdf

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title = "Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric",

abstract = "In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.",

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Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric. / Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.
In: Applied Physics Letters, Vol. 102, No. 6, 12.02.2013, p. 064102.

Research output: Contribution to journal › Article › peer-review

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T1 - Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

AU - Rojas, Jhonathan Prieto

AU - Hussain, Muhammad Mustafa

AU - Sevilla, Galo T.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013/2/12

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Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

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