Structural and magnetoresistive properties of half metallic Co2Mn1-xSi thin films

K. B. Li; J. J. Qiu; P. Luo; L. H. An; Z. B. Guo; Y. K. Zheng; G. C. Han; Y. H. Wu; S. J. Wang

doi:10.1016/j.jmmm.2006.01.136

Structural and magnetoresistive properties of half metallic Co₂Mn_1-xSi thin films

K. B. Li^*, J. J. Qiu, P. Luo, L. H. An, Z. B. Guo, Y. K. Zheng, G. C. Han, Y. H. Wu, S. J. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Polycrystalline Co₂Mn_1-xSi (CMS) thin films with Mn-deficiency can grow on different types of substrates such as MgO (1 0 0) single crystal, α-sapphire (0 0 0 1) and Si coated with SiO₂ either by using V or Ta/Cu as the seed layer. The magnetic property, especially the coercivity of the CMS thin films strongly depends on the crystalline structure and microstructure of the CMS thin film, hence it is affected by the substrate and also the seed layer. Very soft CMS thin film with coercivity of about 20 Oe has been obtained when MgO (1 0 0) is used as the substrate. Magnetic tunnel junctions (with MR ratio of about 9%-18%) by utilizing the CMS as one of ferromagnetic electrodes have been successfully fabricated. The degradation of the magnetoresistive effect of the MTJ after magnetic annealing is attributed to the diffusion of the Mn-atoms into the tunnel barrier during the annealing process.

Original language	English (US)
Pages (from-to)	e196-e200
Journal	Journal of Magnetism and Magnetic Materials
Volume	303
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jmmm.2006.01.136
State	Published - Aug 2006
Externally published	Yes

Keywords

Half metals
Heusler alloy
Magnetic tunneling junction
Thermal stability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2006.01.136

Cite this

@article{43f84a138aa446e49d3a0bf3fd784ed2,

title = "Structural and magnetoresistive properties of half metallic Co2Mn1-xSi thin films",

abstract = "Polycrystalline Co2Mn1-xSi (CMS) thin films with Mn-deficiency can grow on different types of substrates such as MgO (1 0 0) single crystal, α-sapphire (0 0 0 1) and Si coated with SiO2 either by using V or Ta/Cu as the seed layer. The magnetic property, especially the coercivity of the CMS thin films strongly depends on the crystalline structure and microstructure of the CMS thin film, hence it is affected by the substrate and also the seed layer. Very soft CMS thin film with coercivity of about 20 Oe has been obtained when MgO (1 0 0) is used as the substrate. Magnetic tunnel junctions (with MR ratio of about 9%-18%) by utilizing the CMS as one of ferromagnetic electrodes have been successfully fabricated. The degradation of the magnetoresistive effect of the MTJ after magnetic annealing is attributed to the diffusion of the Mn-atoms into the tunnel barrier during the annealing process.",

keywords = "Half metals, Heusler alloy, Magnetic tunneling junction, Thermal stability",

author = "Li, {K. B.} and Qiu, {J. J.} and P. Luo and An, {L. H.} and Guo, {Z. B.} and Zheng, {Y. K.} and Han, {G. C.} and Wu, {Y. H.} and Wang, {S. J.}",

year = "2006",

month = aug,

doi = "10.1016/j.jmmm.2006.01.136",

language = "English (US)",

volume = "303",

pages = "e196--e200",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2 SPEC. ISS.",

}

TY - JOUR

T1 - Structural and magnetoresistive properties of half metallic Co2Mn1-xSi thin films

AU - Li, K. B.

AU - Qiu, J. J.

AU - Luo, P.

AU - An, L. H.

AU - Guo, Z. B.

AU - Zheng, Y. K.

AU - Han, G. C.

AU - Wu, Y. H.

AU - Wang, S. J.

PY - 2006/8

Y1 - 2006/8

N2 - Polycrystalline Co2Mn1-xSi (CMS) thin films with Mn-deficiency can grow on different types of substrates such as MgO (1 0 0) single crystal, α-sapphire (0 0 0 1) and Si coated with SiO2 either by using V or Ta/Cu as the seed layer. The magnetic property, especially the coercivity of the CMS thin films strongly depends on the crystalline structure and microstructure of the CMS thin film, hence it is affected by the substrate and also the seed layer. Very soft CMS thin film with coercivity of about 20 Oe has been obtained when MgO (1 0 0) is used as the substrate. Magnetic tunnel junctions (with MR ratio of about 9%-18%) by utilizing the CMS as one of ferromagnetic electrodes have been successfully fabricated. The degradation of the magnetoresistive effect of the MTJ after magnetic annealing is attributed to the diffusion of the Mn-atoms into the tunnel barrier during the annealing process.

AB - Polycrystalline Co2Mn1-xSi (CMS) thin films with Mn-deficiency can grow on different types of substrates such as MgO (1 0 0) single crystal, α-sapphire (0 0 0 1) and Si coated with SiO2 either by using V or Ta/Cu as the seed layer. The magnetic property, especially the coercivity of the CMS thin films strongly depends on the crystalline structure and microstructure of the CMS thin film, hence it is affected by the substrate and also the seed layer. Very soft CMS thin film with coercivity of about 20 Oe has been obtained when MgO (1 0 0) is used as the substrate. Magnetic tunnel junctions (with MR ratio of about 9%-18%) by utilizing the CMS as one of ferromagnetic electrodes have been successfully fabricated. The degradation of the magnetoresistive effect of the MTJ after magnetic annealing is attributed to the diffusion of the Mn-atoms into the tunnel barrier during the annealing process.

KW - Half metals

KW - Heusler alloy

KW - Magnetic tunneling junction

KW - Thermal stability

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U2 - 10.1016/j.jmmm.2006.01.136

DO - 10.1016/j.jmmm.2006.01.136

M3 - Article

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SN - 0304-8853

VL - 303

SP - e196-e200

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SPEC. ISS.

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