Structural and magnetoresistive properties of magnetic tunnel junctions with half-metallic Co2 MnAl

J. J. Qiu; G. C. Han; W. K. Yeo; P. Luo; Z. B. Guo; T. Osipowicz

doi:10.1063/1.2830554

Structural and magnetoresistive properties of magnetic tunnel junctions with half-metallic Co2 MnAl

J. J. Qiu, G. C. Han, W. K. Yeo, P. Luo, Z. B. Guo, T. Osipowicz

Research output: Contribution to journal › Article › peer-review

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Abstract

A series of polycrystalline full-Heusler Co2 MnAl thin films were deposited on Si (100) coated with thermo Si O2 by using different types of seed layers such as Cr, Mg, MgOCr, and MgO. The properties of the Co2 MnAl thin films such as the coercivity, atomic composition, and crystalline structure strongly depend on the deposition conditions and seed layers. Very soft Co2 MnAl thin films with coercivity of 8.3 Oe and small magnetostriction coefficient λS =1.43× 10-5 had been obtained when MgO was used as seed layer. Magnetic tunnel junctions with magnetoresistance ratio of 12%-19% by utilizing the Co2 MnAl as bottom ferromagnetic electrode have been successfully fabricated.

Original language	English (US)
Article number	07A903
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2830554
State	Published - 2008
Externally published	Yes

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General Physics and Astronomy

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@article{dffa77ca0f4343de8b3e4a727c3c8dd0,

title = "Structural and magnetoresistive properties of magnetic tunnel junctions with half-metallic Co2 MnAl",

abstract = "A series of polycrystalline full-Heusler Co2 MnAl thin films were deposited on Si (100) coated with thermo Si O2 by using different types of seed layers such as Cr, Mg, MgOCr, and MgO. The properties of the Co2 MnAl thin films such as the coercivity, atomic composition, and crystalline structure strongly depend on the deposition conditions and seed layers. Very soft Co2 MnAl thin films with coercivity of 8.3 Oe and small magnetostriction coefficient λS =1.43× 10-5 had been obtained when MgO was used as seed layer. Magnetic tunnel junctions with magnetoresistance ratio of 12%-19% by utilizing the Co2 MnAl as bottom ferromagnetic electrode have been successfully fabricated.",

author = "Qiu, {J. J.} and Han, {G. C.} and Yeo, {W. K.} and P. Luo and Guo, {Z. B.} and T. Osipowicz",

year = "2008",

doi = "10.1063/1.2830554",

language = "English (US)",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "7",

}

TY - JOUR

T1 - Structural and magnetoresistive properties of magnetic tunnel junctions with half-metallic Co2 MnAl

AU - Qiu, J. J.

AU - Han, G. C.

AU - Yeo, W. K.

AU - Luo, P.

AU - Guo, Z. B.

AU - Osipowicz, T.

PY - 2008

Y1 - 2008

N2 - A series of polycrystalline full-Heusler Co2 MnAl thin films were deposited on Si (100) coated with thermo Si O2 by using different types of seed layers such as Cr, Mg, MgOCr, and MgO. The properties of the Co2 MnAl thin films such as the coercivity, atomic composition, and crystalline structure strongly depend on the deposition conditions and seed layers. Very soft Co2 MnAl thin films with coercivity of 8.3 Oe and small magnetostriction coefficient λS =1.43× 10-5 had been obtained when MgO was used as seed layer. Magnetic tunnel junctions with magnetoresistance ratio of 12%-19% by utilizing the Co2 MnAl as bottom ferromagnetic electrode have been successfully fabricated.

AB - A series of polycrystalline full-Heusler Co2 MnAl thin films were deposited on Si (100) coated with thermo Si O2 by using different types of seed layers such as Cr, Mg, MgOCr, and MgO. The properties of the Co2 MnAl thin films such as the coercivity, atomic composition, and crystalline structure strongly depend on the deposition conditions and seed layers. Very soft Co2 MnAl thin films with coercivity of 8.3 Oe and small magnetostriction coefficient λS =1.43× 10-5 had been obtained when MgO was used as seed layer. Magnetic tunnel junctions with magnetoresistance ratio of 12%-19% by utilizing the Co2 MnAl as bottom ferromagnetic electrode have been successfully fabricated.

UR - http://www.scopus.com/inward/record.url?scp=42149179898&partnerID=8YFLogxK

U2 - 10.1063/1.2830554

DO - 10.1063/1.2830554

M3 - Article

AN - SCOPUS:42149179898

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 07A903

ER -

Structural and magnetoresistive properties of magnetic tunnel junctions with half-metallic Co2 MnAl

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