Structural and optical analyses for InGaN-based red micro-LED

Fu-He Hsiao, Wen-Chien Miao, Yu-Heng Hong, Hsin Chiang, I-Hung Ho, Kai-Bo Liang, Daisuke Iida, Chun-Liang Lin, Hyeyoung Ahn, Kazuhiro Ohkawa, Chiao-Yun Chang, Hao-Chung Kuo

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.
Original languageEnglish (US)
JournalDiscover Nano
Volume18
Issue number1
DOIs
StatePublished - May 25 2023

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