Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

X. Li; G. Le Gac; S. Bouchoule; Y. El Gmili; G. Patriarche; S. Sundaram; P. Disseix; F. Réveret; J. Leymarie; J. Streque; F. Genty; J. P. Salvestrini; R. D. Dupuis; X. H. Li; P. L. Voss; A. Ougazzaden

doi:10.1016/j.jcrysgro.2015.09.013

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

X. Li, G. Le Gac, S. Bouchoule, Y. El Gmili, G. Patriarche, S. Sundaram, P. Disseix, F. Réveret, J. Leymarie, J. Streque, F. Genty, J. P. Salvestrini, R. D. Dupuis, X. H. Li, P. L. Voss, A. Ougazzaden^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

10-period Al_0.57Ga_0.43N/Al_0.38Ga_0.62N multi-quantum wells (MQWs) were grown on a relaxed Al_0.58Ga_0.42N buffer on AlN templates on sapphire. The threading dislocations and V-pits were characterized and their origin is discussed. The influence of V-pits on the structural quality of the MQWs and on optical emission at 280 nm was analyzed. It was observed that near-surface V-pits were always associated with grain boundaries consisting of edge threading dislocations originating from the AlN/Al₂O₃ interface. Although the high density of V-pits disrupted MQWs growth, it did not affect the internal quantum efficiency which was measured to be ~1% at room temperature even when V-pit density was increased from 7×10⁷ cm^-2 to 2×10⁹ cm^-2. The results help to understand the origin, propagation and influences of the typical defects in AlGaN MQWs grown on AlN/Al₂O₃ templates which may lead to further improvement of the performance of DUV devices.

Original language	English (US)
Article number	22991
Pages (from-to)	37-44
Number of pages	8
Journal	Journal of Crystal Growth
Volume	432
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.09.013
State	Published - Dec 15 2015
Externally published	Yes

Keywords

A1. Defects
A3. Metalorganic vapor phase epitaxy
A3. Quantum wells
B1. III-nitrides
B3. DUV devices

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Li, X., Le Gac, G., Bouchoule, S., El Gmili, Y., Patriarche, G., Sundaram, S., Disseix, P., Réveret, F., Leymarie, J., Streque, J., Genty, F., Salvestrini, J. P., Dupuis, R. D., Li, X. H., Voss, P. L., & Ougazzaden, A. (2015). Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm. Journal of Crystal Growth, 432, 37-44. Article 22991. https://doi.org/10.1016/j.jcrysgro.2015.09.013

@article{4b3acaeedddd43d383d55bdd1eb53787,

title = "Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm",

abstract = "10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading dislocations and V-pits were characterized and their origin is discussed. The influence of V-pits on the structural quality of the MQWs and on optical emission at 280 nm was analyzed. It was observed that near-surface V-pits were always associated with grain boundaries consisting of edge threading dislocations originating from the AlN/Al2O3 interface. Although the high density of V-pits disrupted MQWs growth, it did not affect the internal quantum efficiency which was measured to be ~1% at room temperature even when V-pit density was increased from 7×107 cm-2 to 2×109 cm-2. The results help to understand the origin, propagation and influences of the typical defects in AlGaN MQWs grown on AlN/Al2O3 templates which may lead to further improvement of the performance of DUV devices.",

keywords = "A1. Defects, A3. Metalorganic vapor phase epitaxy, A3. Quantum wells, B1. III-nitrides, B3. DUV devices",

author = "X. Li and {Le Gac}, G. and S. Bouchoule and {El Gmili}, Y. and G. Patriarche and S. Sundaram and P. Disseix and F. R{\'e}veret and J. Leymarie and J. Streque and F. Genty and Salvestrini, {J. P.} and Dupuis, {R. D.} and Li, {X. H.} and Voss, {P. L.} and A. Ougazzaden",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = dec,

day = "15",

doi = "10.1016/j.jcrysgro.2015.09.013",

language = "English (US)",

volume = "432",

pages = "37--44",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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Li, X, Le Gac, G, Bouchoule, S, El Gmili, Y, Patriarche, G, Sundaram, S, Disseix, P, Réveret, F, Leymarie, J, Streque, J, Genty, F, Salvestrini, JP, Dupuis, RD, Li, XH, Voss, PL & Ougazzaden, A 2015, 'Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm', Journal of Crystal Growth, vol. 432, 22991, pp. 37-44. https://doi.org/10.1016/j.jcrysgro.2015.09.013

TY - JOUR

T1 - Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

AU - Li, X.

AU - Le Gac, G.

AU - Bouchoule, S.

AU - El Gmili, Y.

AU - Patriarche, G.

AU - Sundaram, S.

AU - Disseix, P.

AU - Réveret, F.

AU - Leymarie, J.

AU - Streque, J.

AU - Genty, F.

AU - Salvestrini, J. P.

AU - Dupuis, R. D.

AU - Li, X. H.

AU - Voss, P. L.

AU - Ougazzaden, A.

PY - 2015/12/15

Y1 - 2015/12/15

N2 - 10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading dislocations and V-pits were characterized and their origin is discussed. The influence of V-pits on the structural quality of the MQWs and on optical emission at 280 nm was analyzed. It was observed that near-surface V-pits were always associated with grain boundaries consisting of edge threading dislocations originating from the AlN/Al2O3 interface. Although the high density of V-pits disrupted MQWs growth, it did not affect the internal quantum efficiency which was measured to be ~1% at room temperature even when V-pit density was increased from 7×107 cm-2 to 2×109 cm-2. The results help to understand the origin, propagation and influences of the typical defects in AlGaN MQWs grown on AlN/Al2O3 templates which may lead to further improvement of the performance of DUV devices.

AB - 10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading dislocations and V-pits were characterized and their origin is discussed. The influence of V-pits on the structural quality of the MQWs and on optical emission at 280 nm was analyzed. It was observed that near-surface V-pits were always associated with grain boundaries consisting of edge threading dislocations originating from the AlN/Al2O3 interface. Although the high density of V-pits disrupted MQWs growth, it did not affect the internal quantum efficiency which was measured to be ~1% at room temperature even when V-pit density was increased from 7×107 cm-2 to 2×109 cm-2. The results help to understand the origin, propagation and influences of the typical defects in AlGaN MQWs grown on AlN/Al2O3 templates which may lead to further improvement of the performance of DUV devices.

KW - A1. Defects

KW - A3. Metalorganic vapor phase epitaxy

KW - A3. Quantum wells

KW - B1. III-nitrides

KW - B3. DUV devices

UR - http://www.scopus.com/inward/record.url?scp=84943379555&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2015.09.013

DO - 10.1016/j.jcrysgro.2015.09.013

M3 - Article

AN - SCOPUS:84943379555

SN - 0022-0248

VL - 432

SP - 37

EP - 44

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 22991

ER -

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Abstract

Keywords

ASJC Scopus subject areas

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